STAC2942FW

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The STAC2942FW is a series of RF (Radio Frequency) MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) manufactured by STMicroelectronics. These MOSFETs are designed for use in high-temperature applications and have an operating temperature range of -55°C to 175°C. The STAC2942FW is a high-power device and can handle up to 25A continuous drain current (ID) at 175°C. The peak drain current (IPK) is rated at 200A. It has a package configuration known as 6-Lead PowerPAK, providing the device with superior thermal performance.

The STAC2942FW has superior dynamic characteristics, including high frequency response and high-speed switching with a maximum frequency of 2GHz and a typical switching speed of 10nS (nano-seconds). Its low gate-drain capacitance and high stability across temperature variations make it suitable for RF/microwave applications. Its low gate charge and low junction-to-case thermal resistance make it a good choice for high power and high speed applications.

The STAC2942FW offers excellent power efficiency coupled with low drain-source resistance (RDS(ON)). A low profile package is provided to increase thermal management capabilities. The typical on-state drain-source resistance is 46milliOhms (mΩ) at Vds=10V and Id=7.5A. This ensures low power dissipation, thus improving device life span.

STAC2942FW MOSFETs are suitable for a variety of applications, such as radio frequency power amplifiers, DC to DC converters, switches for power converters, secondary protection circuits and power management systems. It is most often used in RF amplifiers, such as cellular base station amplifiers for 4G and 5G networks, and point-to-point radio systems.

The working principle of the STAC2942FW can be broken down into two main parts: the gate-drain and the source-drain. The gate-drain is controlled by a gate voltage, while the source-drain is driven by a drain source voltage. When a positive gate voltage is applied to the gate-drain, it creates an electric field which in turn affects the resistance between the source-drain. This resistance is known as the drain-source resistance (RDS(ON)). A higher gate voltage will decrease RDS(ON), while a lower gate voltage will increase RDS(ON). The decrease in RDS(ON) allows electrons to flow more freely; thus increasing conduction and allowing the device to operate at its peak performance. Conversely, if the gate voltage is too high, the electric field will dissipate and RDS(ON) will increase, resulting in less current flowing, decreased conduction and dissipation of power.

The STAC2942FW MOSFET is perfectly suited for use in high temperature, high power and high frequency applications. Its superior dynamic characteristics, wide operating temperature range, high power ratings and superior thermal management capabilities make it an ideal choice for RF and microwave applications.

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