STE145N65M5

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	ISOTOP
Supplier Device Package:	ISOTOP®
Mounting Type:	Chassis Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	679W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	18500pF @ 100V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	414nC @ 10V
Series:	MDmesh™ V
Rds On (Max) @ Id, Vgs:	15 mOhm @ 69A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	143A (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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STE145N65M5 Application Field and Working Principle

The STE145N65M5 is a high-voltage, easily-integrated and cost-effective MOSFET (metal-oxide-semiconductor field-effect transistor) which makes it ideal for power management applications. This MOSFET device was released by STMicroelectronics in 2006 and continues to be used in many commercial and industrial applications. The MOSFET device is used as a power switching device capable of withstanding high voltages, making them ideal for a variety of circuit applications.The STMicroelectronics\' STE145N65M5 is a silicon based N-channel MOSFET transistor with a maximum drain-to-source voltage (Vds) of 650V. It is a static gate MOSFET meaning that it is limited to switching actions, and has an average on-state resistance of 145mohm. This MOSFET has a high current irradiance threshold, making it ideal for applications which require fast switching. Furthermore, the device has a fast turn-off performance which allows for efficient power management.The device is intended for use in high voltage applications such as switching supplies, automotive, battery chargers, and industrial applications. Typically, the MOSFET device is used in applications that require a high current control. For example, it can be used as a switch in an AC/DC boost converter circuit, as a gate driver in digital circuits, or as a switch in a power converter. The device is also often used in solar, battery and automotive applications. The device offers lower on-resistance, higher switching speeds and lower current losses compared to other MOSFETs, making it the perfect choice for applications which require high-speed switching with low on-state losses.The working principle of the STE145N65M5 MOSFET device is straight forward. When the voltage is applied to the Gate terminal, a current will flow from the source to the drain. This current is limited by the resistance of the MOSFET. When the current reaches a predetermined value, the device will switch on and current will flow through the device.The principle of MOSFETs relies on the Gate to Source voltage, denoted by VG(S). When this Gate to Source voltage is lowered the device will switch off. If an external voltage is applied higher than the Gate to Source voltage, the device will close the connection between the drain and the source and current will flow through the device.The STE145N65M5 MOSFET device relies on the principle of depletion-mode operation. The device starts off in a high-resistance state and, when exposed to a voltage across the gate and source terminals, it turns on and current flows through it. When the Gate to Source voltage is lowered, the device will again switch off and the resistance of the device will increase.The STE145N65M5 MOSFET device is a static gate and is limited to switching applications. It is an ideal choice for a variety of high voltage applications as it offers fast switching with low on-state losses. The device has a maximum drain-to-source voltage of 650V and an average on-state resistance of 145mohm. Its fast turn-off performance makes the device ideal for efficient power management applications. The device is capable of withstanding high voltages and is used in a variety of circuit applications, such as switching supplies, automotive, battery chargers, and industrial applications.

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