
Allicdata Part #: | 497-3166-5-ND |
Manufacturer Part#: |
STE180NE10 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 100V 180A ISOTOP |
More Detail: | N-Channel 100V 180A (Tc) 360W (Tc) Chassis Mount I... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | ISOTOP |
Supplier Device Package: | ISOTOP® |
Mounting Type: | Chassis Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 360W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 21000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 795nC @ 10V |
Series: | STripFET™ |
Rds On (Max) @ Id, Vgs: | 6 Ohm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 180A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STE180NE10 is a discrete field effect transistor (FET) designed to operate over an extended temperature range of -55°C to 125°C. The device has a single N-Channel MOSFET with a voltage rating of 10V and a drain-source current capacity of 180A. It is used in a range of automotive and aerospace applications, such as engine management, powertrain control systems and motor control systems.
The STE180NE10 is a depletion-mode MOSFET and consists of one N-channel MOSFET in a single package. The device has a drain-source voltage rating of 10V and a maximum drain-source current of 180A. It is a non-logic level device and requires a gate driver to switch the device. The device has a very low on-resistance rating of 6mΩ and is suitable for strongly driving high-powered elements such as motors, solenoids and relays.
The STE180NE10 works by controlling the flow of current from the drain to the source by controlling the electric field across the oxide layer by varying the voltage between the gate and source electrodes. When the gate-source voltage moves from a negative to a positive voltage, the electric field polarizes the oxide gate so that it is conductive. This increases the current through the device and water can be conducted from source to drain. As the voltage decreases it decreases the electric field. This reduces the conductance of the alloy and inhibits the flow of current.
The STE180NE10 is commonly used in automotive and aerospace applications. In automotive applications, the device is used in engine management, powertrain control systems and motor control systems. In aerospace applications, the device can be used to switch high-power loads, such as actuators, motors and pumps. The device is also used in industrial and medical applications, such as industrial automation, power supplies and motor massagers.
The STE180NE10 is a robust and reliable MOSFET device designed to operate over an extended temperature range. It has a low on-resistance rating and is widely used in a range of automotive and aerospace applications. The device is a single N-Channel MOSFET with a voltage rating of 10V and a drain-source current capacity of 180A. It is used to switch high-power elements and is suitable for a variety of applications, such as engine management, powertrain control systems and motor control systems.
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