STE180NE10 Allicdata Electronics
Allicdata Part #:

497-3166-5-ND

Manufacturer Part#:

STE180NE10

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 100V 180A ISOTOP
More Detail: N-Channel 100V 180A (Tc) 360W (Tc) Chassis Mount I...
DataSheet: STE180NE10 datasheetSTE180NE10 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: ISOTOP
Supplier Device Package: ISOTOP®
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 360W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 21000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 795nC @ 10V
Series: STripFET™
Rds On (Max) @ Id, Vgs: 6 Ohm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The STE180NE10 is a discrete field effect transistor (FET) designed to operate over an extended temperature range of -55°C to 125°C. The device has a single N-Channel MOSFET with a voltage rating of 10V and a drain-source current capacity of 180A. It is used in a range of automotive and aerospace applications, such as engine management, powertrain control systems and motor control systems.

The STE180NE10 is a depletion-mode MOSFET and consists of one N-channel MOSFET in a single package. The device has a drain-source voltage rating of 10V and a maximum drain-source current of 180A. It is a non-logic level device and requires a gate driver to switch the device. The device has a very low on-resistance rating of 6mΩ and is suitable for strongly driving high-powered elements such as motors, solenoids and relays.

The STE180NE10 works by controlling the flow of current from the drain to the source by controlling the electric field across the oxide layer by varying the voltage between the gate and source electrodes. When the gate-source voltage moves from a negative to a positive voltage, the electric field polarizes the oxide gate so that it is conductive. This increases the current through the device and water can be conducted from source to drain. As the voltage decreases it decreases the electric field. This reduces the conductance of the alloy and inhibits the flow of current.

The STE180NE10 is commonly used in automotive and aerospace applications. In automotive applications, the device is used in engine management, powertrain control systems and motor control systems. In aerospace applications, the device can be used to switch high-power loads, such as actuators, motors and pumps. The device is also used in industrial and medical applications, such as industrial automation, power supplies and motor massagers.

The STE180NE10 is a robust and reliable MOSFET device designed to operate over an extended temperature range. It has a low on-resistance rating and is widely used in a range of automotive and aerospace applications. The device is a single N-Channel MOSFET with a voltage rating of 10V and a drain-source current capacity of 180A. It is used to switch high-power elements and is suitable for a variety of applications, such as engine management, powertrain control systems and motor control systems.

The specific data is subject to PDF, and the above content is for reference

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