
Allicdata Part #: | STF60N55F3-ND |
Manufacturer Part#: |
STF60N55F3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 55V 42A TO-220FP |
More Detail: | N-Channel 55V 42A (Tc) 30W (Tc) Through Hole TO-22... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Series: | STripFET™ III |
Rds On (Max) @ Id, Vgs: | 8.5 mOhm @ 32A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STF60N55F3 is a N-channel MOSFET that is commonly used in a variety of applications. This type of MOSFET is often chosen due to its relatively low cost and its ability to handle large amounts of current while maintaining a high level of switching speed. In addition, the STF60N55F3 is often considered to be one of the most reliable types of MOSFETs.
The STF60N55F3 is a vertical DMOSFET, which means that it can be used for both digital and analog applications. The most common applications for the STF60N55F3 MOSFET include power amplifiers, RF power supplies, linear amplifiers, switching power supplies, and high-speed pulse applications.
The main advantages of the STF60N55F3 are that it can handle large currents and provide fast switching speeds, while still maintaining a high level of reliability. In addition, the STF60N55F3 also has a typical on-resistance of 0.1 ohms, which makes it suitable for high efficiency applications.
The STF60N55F3 MOSFET works by using a gate terminal to control the flow of electrical current between the source and the drain. The gate terminal is connected to the source terminal and is charged with a Gate-Source voltage (VGS). When the Gate-Source voltage is greater than the threshold voltage (Vth), a channel is formed between the source and the drain, allowing the current to pass through.
The STF60N55F3 also uses a leakage current to monitor the flow of current between the drain and the source. When the Gate-Source voltage is below the threshold voltage, the leakage current is used to measure the current flow and the resulting voltage drop across the gate terminal. This voltage drop can then be monitored to detect any changes in the gate current.
The STF60N55F3 MOSFET is relatively easy to install, as it requires little setup compared to most other types of FETs. In addition, this type of MOSFET is also capable of withstanding very high voltage levels, which makes it well-suited for applications in which the voltage is expected to fluctuate.
One of the main drawbacks of the STF60N55F3 is that it requires a higher voltage for operation than most other MOSFETs. In addition, the device does not have a low capacitance, which means that it can cause signal degradation and noise problems in some applications.
In summary, the STF60N55F3 is a reliable and cost-effective type of MOSFET that can be used in a variety of applications. It has the ability to handle large amounts of current while maintaining a high level of switching speed, and it is relatively easy to install. The device is also capable of withstanding very high voltage levels and has a relatively low leakage current, making it suitable for applications in which the voltage is expected to fluctuate. However, the STF60N55F3 MOSFET does require a higher voltage for operation and has a higher capacitance than other types of FETs, which can lead to signal degradation and noise problems in some applications.
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