STF6N68K3 Allicdata Electronics
Allicdata Part #:

STF6N68K3-ND

Manufacturer Part#:

STF6N68K3

Price: $ 0.78
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 680V TO-220FP
More Detail: MOSFET N-CH 680V TO-220FP
DataSheet: STF6N68K3 datasheetSTF6N68K3 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.71436
Stock 1000Can Ship Immediately
$ 0.78
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: --
Technology: --
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: Through Hole
Supplier Device Package: TO-220FP
Package / Case: TO-220-3 Full Pack
Description

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The STF6N68K3 is a single N-Channel Enhancement Mode Field Effect Transistor (FET) with a voltage blocking capacity of up to 60 volts and a continuous drain current of 85A. It is an ideal choice for applications requiring high resistance and fast switching speeds. The STF6N68K3 can be used in a wide range of industrial, commercial, and consumer electronics.

The STF6N68K3 is an enhancement mode device and works on the same principle as a field-coupled transistor. In this configuration, an electric field is generated between an input gate and a drain/source terminal. When a voltage is applied to the gate, electrons are attracted to the negatively charged gate, which creates a thin conducting channel between the drain and the source.

This creates a very high input resistance at the gate, allowing the transistor to operate as an electronically controlled switch. The drain current is proportional to the gate voltage, which can be modified to control the amount of current flowing through the circuit. As the gate voltage increases, the source current increases, and when the voltage drops, the drain current decreases.

The STF6N68K3 is typically used in high-power switching applications, such as LED lighting, automotive electronics, motor control, and power supplies. Additionally, the FET\'s high frequency performance makes it suitable for switching applications in wireless and data communication systems. It can also be used in frequency conversion and inverter circuits.

The STF6N68K3\'s gate capacitance is minimized, which makes it suitable for high-speed switching applications. The device has a maximum power dissipation rating of 4W and a low on-resistance of 0.08 ohms. Its unique design also ensures high immunity to latch-up and its rugged design ensures improved reliability. It is also extremely heat-resistant with an operating temperature range of -55C to +150C.

The STF6N68K3 contains integrated protection features such as an electrostatic discharge (ESD) protection circuit and a temperature shutdown device. It also features a thermal shut-down circuit which limits the maximum power dissipation and keeps the device from becoming too warm. All of these features make it a reliable and robust device for many applications.

The specific data is subject to PDF, and the above content is for reference

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