| Allicdata Part #: | STF6NM60N-ND |
| Manufacturer Part#: |
STF6NM60N |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 600V 4.6A TO-220FP |
| More Detail: | N-Channel 600V 4.6A (Tc) 20W (Tc) Through Hole TO-... |
| DataSheet: |  STF6NM60N Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220FP |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 20W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 420pF @ 50V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
| Series: | MDmesh™ II |
| Rds On (Max) @ Id, Vgs: | 920 mOhm @ 2.3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4.6A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The STF6NM60N is a MOSFET transistor (field-effect transistor) designed for high speed, low power switching applications. It is a DMOS (double-diffused MOS) type with an enhancement-mode, P-channel topping, and is commonly used in power converter designs. The STF6NM60N has several important features, including: a low on-state resistance (RDS_on) of 0.019Ω, a low threshold voltage (Vth) of 1.7V, excellent thermal characteristics, and a high-temperature rating of 175°C.
This type of MOSFET is perfect for various power switch applications that require a fast switching speed, high voltage and low current control, precise current control, and excellent thermal performance. Some common applications include: motor control, power management, power switching, and power conversion. This type of MOSFET is also ideal for use in various switching and rectification circuits, where high power, small size, and precise current control are of paramount importance. The STF6NM60N is also ideal for use in automotive, automotive electronics, lighting, and audio/video systems.
The working principle of the STF6NM60N is based on its four terminals (gate, drain, source, and body). When voltage is applied to the gate, an electric field is created between the gate and the body. This field creates a conductive channel between the drain and source, allowing current to flow. Since this is a P-type MOSFET, the current flows in the outward direction (towards the drain). When the voltage is increased, a higher current flows through the MOSFET and the channel is increased.
The STF6NM60N is a versatile MOSFET, perfect for various power switching applications. Its low on-state resistance, low threshold voltage, and excellent thermal characteristics make it perfect for applications where fast switching speed, low power consumption, and precise current control are required. With its high temperature rating and small size, the STF6NM60N is an ideal choice for automotive, automotive electronics, lighting, and audio/video systems.
The specific data is subject to PDF, and the above content is for reference
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