STI30N65M5

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STI30N65M5 is a common type of field effect transistor (FET). It is a metal oxide semiconductor (MOSFET) consisting of a single layer of metal-oxide-semiconductor material that regulates current flow between two terminals.

Introduction

The STI30N65M5 is a version of power MOSFET manufactured by ST Microelectronics. It is a N-channel MOSFET, characterized by its low on-state resistance, high power and high frequency performance, and low threshold. The device is designed for applications where high efficiency, low power loss, and noise reduction are desired. It is ideal for use in switching power supplies, motor drives, and motor control in general.

Working Principle

The working principle of an FET is based on the capacitive effect of the metal-oxide layer. The MOSFET has two types of terminals, the source and the drain. A voltage applied to the gate terminal will cause a charge to be stored in the metal-oxide layer, which then affects the flow of the current between the source and the drain. This effect is known as the MOSFET\'s threshold voltage.

As the voltage to the gate terminal increases, the current flowing from the source to the drain also increases. The device is then operating at what is known as the linear region, or an ohmic region. The drain current is people to the gate voltage and is known as the transconductance. When the voltage to the gate terminal is increased enough, saturation is reached, and current flow between the two terminals is maximized.

Advantages

The primary advantage of the STI30N65M5 is its low on-state resistance. This device has an excellent on-state resistance-to-area ratio, making it ideal for applications where lower on-state resistance is desired. For example, the device is able to achieve high current densities and use less voltage, resulting in improved efficiency and lower power loss. Additionally, this device is designed with high speed and impulse current capabilities. This feature makes it suitable for high speed drawing applications, as well as for pulse-width modulation.

Applications

The STI30N65M5 is commonly used in power control applications such as motor drives, power supplies and automation. With its low on-state resistance, high power and low threshold, this device is ideal for applications requiring a low power loss, high efficiency, and minimal noise. The device can also be used in digital and analog circuits as it is able to withstand high switch frequencies and operate over a wide voltage range. Additionally, the device is well-suited for use in home appliances and consumer electronics due to its robust construction, low threshold, and high frequency operation.

Conclusion

The STI30N65M5 is a power MOSFET solution designed to provide low on-state resistance and high power performance. This device is ideal for power control and motor control applications where a lower on-state resistance, better efficiency, and less noise are desired. Furthermore, due to its robust construction, low threshold, and high frequency capability, this device is suitable for use in home appliances and consumer electronics.

The specific data is subject to PDF, and the above content is for reference