
Allicdata Part #: | 497-15016-5-ND |
Manufacturer Part#: |
STI33N60M2 |
Price: | $ 3.96 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 26A I2PAK |
More Detail: | N-Channel 600V 26A (Tc) 190W (Tc) Through Hole I2P... |
DataSheet: | ![]() |
Quantity: | 987 |
1 +: | $ 3.59730 |
50 +: | $ 2.89183 |
100 +: | $ 2.63479 |
500 +: | $ 2.13353 |
1000 +: | $ 1.79937 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK (TO-262) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 190W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1781pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 45.5nC @ 10V |
Series: | MDmesh™ II Plus |
Rds On (Max) @ Id, Vgs: | 125 mOhm @ 13A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 26A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STI33N60M2 is a high-voltage, high-speed power MOSFET transistor. It is used typically in switching applications such as motor drives, DC-DC converters, power supplies, and UPS systems. It is designed to withstand high operating voltages up to 600V and offers low on-state resistance. It also provides a fast switching time and has a maximum current rating of 33A.
A MOSFET (metal oxide semiconductor field effect transistor) is a type of field-effect transistor device that uses metal oxide semiconductor material as the primary electrical function block. This type of transistor consists of numerous thin insulating layers of semiconductor material, which form what’s known as a gate oxide layer. When the electrical charge of the gate oxide layer is changed, it modifies the electrical characteristics of the device.
In the case of the STI33N60M2, it utilizes the enhanced drain-source maximun rating of 600V, as well as its ability to switch quickly, thanks to its fast reverse recovery time. It also provides a high current rating of 33A, which enables it to handle a high-power load. The low on-state resistance further enables the STI33N60M2 to transfer its power more efficiently and with less heat generated.
The STI33N60M2 typically finds use in applications such as motor drives, DC-DC converters, power supplies, and UPS systems. This device is capable of withstanding high voltages and is designed particularly for high frequency applications. Due to its low on-state resistance, the STI33N60M2 can transfer power more efficiently, whilst its fast-switching capabilities reduce power losses. The high current rating of 33A allows it to handle high-power loads that are often found in such applications.
In short, the STI33N60M2 is a high-performance power MOSFET transistor that is used in a variety of applications featuring high voltage and high speeds, such as motor drives and power supplies. This device is designed to withstand high voltages up to 600V and has a low on-state resistance which enables it to transfer power more efficiently, whilst its fast-switching capabilities reduce power losses. A current rating of 33A allows it to handle high-power loads and its enhanced drain-source maximun rating of 600V provides it additional robustness for extreme condition applications.
The specific data is subject to PDF, and the above content is for reference
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