STI33N60M2 Allicdata Electronics
Allicdata Part #:

497-15016-5-ND

Manufacturer Part#:

STI33N60M2

Price: $ 3.96
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 26A I2PAK
More Detail: N-Channel 600V 26A (Tc) 190W (Tc) Through Hole I2P...
DataSheet: STI33N60M2 datasheetSTI33N60M2 Datasheet/PDF
Quantity: 987
1 +: $ 3.59730
50 +: $ 2.89183
100 +: $ 2.63479
500 +: $ 2.13353
1000 +: $ 1.79937
Stock 987Can Ship Immediately
$ 3.96
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK (TO-262)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 190W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1781pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 45.5nC @ 10V
Series: MDmesh™ II Plus
Rds On (Max) @ Id, Vgs: 125 mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STI33N60M2 is a high-voltage, high-speed power MOSFET transistor. It is used typically in switching applications such as motor drives, DC-DC converters, power supplies, and UPS systems. It is designed to withstand high operating voltages up to 600V and offers low on-state resistance. It also provides a fast switching time and has a maximum current rating of 33A.

A MOSFET (metal oxide semiconductor field effect transistor) is a type of field-effect transistor device that uses metal oxide semiconductor material as the primary electrical function block. This type of transistor consists of numerous thin insulating layers of semiconductor material, which form what’s known as a gate oxide layer. When the electrical charge of the gate oxide layer is changed, it modifies the electrical characteristics of the device.

In the case of the STI33N60M2, it utilizes the enhanced drain-source maximun rating of 600V, as well as its ability to switch quickly, thanks to its fast reverse recovery time. It also provides a high current rating of 33A, which enables it to handle a high-power load. The low on-state resistance further enables the STI33N60M2 to transfer its power more efficiently and with less heat generated.

The STI33N60M2 typically finds use in applications such as motor drives, DC-DC converters, power supplies, and UPS systems. This device is capable of withstanding high voltages and is designed particularly for high frequency applications. Due to its low on-state resistance, the STI33N60M2 can transfer power more efficiently, whilst its fast-switching capabilities reduce power losses. The high current rating of 33A allows it to handle high-power loads that are often found in such applications.

In short, the STI33N60M2 is a high-performance power MOSFET transistor that is used in a variety of applications featuring high voltage and high speeds, such as motor drives and power supplies. This device is designed to withstand high voltages up to 600V and has a low on-state resistance which enables it to transfer power more efficiently, whilst its fast-switching capabilities reduce power losses. A current rating of 33A allows it to handle high-power loads and its enhanced drain-source maximun rating of 600V provides it additional robustness for extreme condition applications.

The specific data is subject to PDF, and the above content is for reference

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