STI35N65M5

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STI35N65M5 Application Field and Working Principle

The STI35N65M5 is a insulated gate bipolar transistor (IGBT) module. It is specifically designed to be a cost-effective solution for automotive applications, such as engine controls, power steering and air conditioning systems.

IGBTs control the flow of electrical current in much the same way as traditional power transistors, but with improved switching performance, higher efficiency and lower operating temperature.

This module is specifically designed for medium-voltage, high-power applications up to 1,500V and up to 65A. It is a two-level device, consisting of an insulated gate field effect transistor (IGFET) and a bipolar power transistor (BPT).

The IGBT works by using a small voltage applied to the gate to control the current flow through the device. This voltage is the same as the gate-source voltage, usually referred to as Vgs. The greater the Vgs, the more current is allowed to flow (which is why it is referred to as a switch).

This module also provides additional protection against thermal runaway by controlling the gate voltage based on the temperature of the device. This helps to ensure that the device does not draw too much current, as this would lead to overheating and/or premature failure.

In addition to its excellent switching performance, the STI35N65M5 module is also especially suited for applications that require rapid on/off switching time (less than 10 microseconds), as these are the most efficient and reliable types of semiconductor devices to use in such applications.

The STI35N65M5 module is an excellent choice for automotive applications, as it provides reliable and cost-effective performance with up to 65A of current capability and a 2.8V to 8V gate voltage range.

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