STLD200N4F6AG Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4V @ 1mA
Package / Case:	8-PowerWDFN
Supplier Device Package:	PowerFlat™ (5x6) Dual Side
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	158W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	10700pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	172nC @ 10V
Series:	Automotive, AEC-Q101, STripFET™ F6
Rds On (Max) @ Id, Vgs:	1.5 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

STLD200N4F6AG is a self-protected Planar Power MOSFET, which is designed for high power switching applications. It is a 50V N-Channel enhancement mode MOSFET and is available in TO-274 package.The STLD200N4F6AG MOSFET is a high current, low on-resistance device which is suitable for low power consumption applications. It can be used in a wide range of applications such as motor drives, power supplies, dc-dc converters, cell phone chargers, and other power switching applications.The STLD200N4F6AG MOSFET has an RDS(on) of 1.3mΩ and a Gate charge of 200 nC. It is a highly efficient device that is capable of delivering high current through very small on-state resistance. This makes the device ideal for applications that require high power performance with minimal power consumption.The STLD200N4F6AG MOSFET is implemented with a low thermal impedance package which helps reduce the junction temperature and improve reliability. The device also has a reliable built-in source-drain diode which helps protect the device from overvoltage and surges.The working principle of the STLD200N4F6AG MOSFET is based on the physical characteristics of metal oxide and changes in the current passing through it. When the gate voltage of the device is increased, the metal oxide charge carriers increase, resulting in increased currents passing through the device. This increased current is then passed to the load.In a metal oxide MOSFET, the resistance between the source and drain terminals is controlled by the gate voltage. When the gate voltage is increased, the resistance between the source and drain terminals decreases. This is due to the increase in the metal oxides’ charge carriers, allowing more current to pass through the MOSFET.The STLD200N4F6AG MOSFET can also be used as a power switch in various applications. It can be used to turn on and off the power supply to a system, to regulate the amount of current passing through a circuit, and to act as an electronic switch for various applications.In conclusion, the STLD200N4F6AG MOSFET is a highly efficient, low-power-consumption device that is suitable for various applications that require high power performance with low on-state resistance. It is implemented with a low thermal impedance package and a reliable built-in source-drain diode which makes it an ideal device for various power switching applications. Furthermore, the working principle of the metal oxide MOSFET helps to understand the current passing through the device and the regulation of the current with the help of a gate voltage.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description