STP200NF03

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4950pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	140nC @ 10V
Series:	STripFET™ III
Rds On (Max) @ Id, Vgs:	3.6 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Not For New Designs
Packaging:	Tube

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The STP200NF03 is a high power N-channel MOSFET that is designed for use in switching applications. This FET has a breakdown voltage of 20V and a current handling capability of 200A. It can be used in dc-dc converters, motor drives, controlled rectifiers, lighting and other applications requiring high current and low on-resistance.The STP200NF03 is an N-channel enhancement-mode MOSFET, or field effect transistor. It is a 4-terminal device with source, drain, gate and body connections. This device has a built-in body diode between the source and drain terminals which provides protection against electrical overstress due to voltage spikes. The MOSFET also features an insulated gate which isolates the gate from the source and drain terminals and enables the device to be operated under high voltage and temperature conditions.The working principle of the STP200NF03 is simple and well understood. When a small voltage difference is applied to the gate terminal, the transistor opens and allows a large current to flow through the drain-source terminals. The current is limited by the resistance of the channel, which is adjustable by varying the gate-source voltage. This allows the device to be used to control the current in a variety of applications.The STP200NF03 is typically used in power switching applications in which a high current needs to be switched on and off. It is commonly used in motor drives, rectifier circuits and dc-dc converters. It is also used in lighting applications where the device can be used to control the current in order to vary the brightness of the light.In summary, the STP200NF03 is a high power N-channel MOSFET designed for use in applications requiring high current and low on-resistance. It is a 4-terminal device which features an insulated gate, a built-in body diode and adjustable channel resistance. The device works by varying the gate-source voltage to control the current flowing through the drain-source terminals. It is typically used in power switching applications such as motor drives, rectifier circuits and dc-dc converters as well as lighting applications.

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