Allicdata Part #: | 497-7516-5-ND |
Manufacturer Part#: |
STP22NF03L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 30V 22A TO-220 |
More Detail: | N-Channel 30V 22A (Tc) 45W (Tc) Through Hole TO-22... |
DataSheet: | STP22NF03L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 330pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 9nC @ 5V |
Series: | STripFET™ II |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 11A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STP22NF03L is among a wide range of field-effect transistors (FETs) used in power management and analog applications. The device’s key feature is its low-power consumption, which makes it ideal for a variety of low-power applications.
The STP22NF03L is a single N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) with a 23mm2 footprint. The device’s drain-source on-resistance (RDS) is typical 22 ohms at 4.5V. It also has fast switching speed, with a turn-on time of 135ns.
The STP22NF03L is suitable for various uses, such as general-purpose switching, load switching, and battery switching. It can also be used in on/off and high-side switch gear, such as motor control systems and automotive instrumentation. The device can be found in a wide range of consumer electronics, including personal computers, game consoles, and mobile phones.
The STP22NF03L is based on a MOSFET structure, which consists of a P-channel MOSFET in the source and an N-channel MOSFET in the drain. The P-channel MOSFET acts as a voltage regulator and is used to control the current flowing through the device. The N-channel MOSFET is used to regulate the flow of current from the drain to the source.
When a voltage is applied to the gate of the FET, a gate-source voltage (VGS) is created. This gate-source voltage is used to control the flow of current through the device. When the VGS reaches the threshold voltage (Vth) of the device, it turns on, allowing current to flow between the source and the drain. When the VGS is below the threshold voltage, the FET is off, and no current can flow. This is the basic working principle of the STP22NF03L.
The STP22NF03L is a versatile power management device suitable for a range of applications. It offers low-power consumption, fast switching speeds, and a wide range of uses. It’s an ideal choice for low-power applications such as on/off switching and battery switching.
The specific data is subject to PDF, and the above content is for reference
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