STP20NM50FD

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STP20NM50FD Application Field and Working Principle

The STP20NM50FD N-Channel MOSFET, manufactured by STMicroelectronics, is a sturdy and robust device designed for applications that require high-power electronic switching and power handling capabilities. It is a thru-hole, surface-mountable device intended for easy installation in any design. This MOSFET operates with an input voltage ranging from 10 to 100 volts, making it an excellent choice for high-power applications. Its on-state resistance of 0.128 ohms makes it ideal for applications requiring low power consumption.

Application Fields

The STP20NM50FD is available in component form, making it ideal for applications such as motor control, high-voltage switching, and high-power switching. These applications require high-power capacitive load switching, which the STP20NM50FD can handle easily and reliably. The STP20NM50FD is also an ideal solution for applications demanding high power, low-on resistance, and reliable switching performance. Due to its highly efficient power handling capabilities, it is an excellent choice for energy-saving applications such as power factor controllers. This component is also an excellent choice for applications such as field-effect transistors (FETs) for high-frequency power conversion, and switching power supplies for energy efficiency and low noise.

Working Principle

The STP20NM50FD N-Channel MOSFET is a three-terminal device with a bidirectional structure. It has a drain, a source, and a gate. The MOSFET operates by managing the conductance between the drain and the source terminals. The drain and source terminals are connected to the power supply voltage and the gate is connected to the control signal. When a negative voltage is applied to the gate terminal, the device switches on and becomes an effective low-resistance path between the drain and source terminals. Conversely, when the gate voltage is positive, the device switches off and functions as an open circuit. The STP20NM50FD is designed using the latest technology with a low on-state resistance and a high-power handling capability. This enables the device to handle high-power electronic switching. It also features an excellent surge handling capability and excellent input output range.

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