Allicdata Part #: | 497-4820-5-ND |
Manufacturer Part#: |
STP21NM50N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 500V 18A TO-220 |
More Detail: | N-Channel 500V 18A (Tc) 140W (Tc) Through Hole TO-... |
DataSheet: | STP21NM50N Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 140W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1950pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STP21NM50N transistor is a double-diffused N-channel power MOSFET (metal oxide semiconductor field-effect transistor) manufactured by STMicroelectronics. The STP21NM50N has a power rating of 500 V, a current rating of 21 A, and an RDS(on) resistance of 0.31 Ohm, making it suitable for applications requiring low ON resistance and high power, such as motor control and power supply circuits.
As with any MOSFET, the STP21NM50N works by modulating the current flowing through the channel area between the source and the drain via a gate voltage. When the gate voltage is low (close to zero volts in the case of an N-channel device), the channel is blocked and no electrons can flow through the device. This is known as the cutoff state. When the gate voltage increases, the channel becomes partially conductive and electrons can flow from the source to the drain, as long as a voltage greater than the threshold voltage is applied across the drain and source. This is known as the active mode of operation and is the most commonly used working mode for power MOSFETs.
In addition to its low ON resistance, the STP21NM50N also features improved avalanche characteristics, fast switching speed, and ease of protection against electrostatic discharges. This makes it suitable for a wide range of applications, including motor control, DC-DC and AC-DC converters, driving switching regulator circuits, and power supplies.
The STP21NM50N can also be used in situations where EMI (electromagnetic interference) is a concern. Its low input capacitance and low output capacitance behave similarly to other low-impedance devices, which helps reduce the level of emissions from the device. This helps to meet the requirements of modern EMI regulations and allows it to be used in sensitive applications.
The STP21NM50N is widely used in the industrial, automotive, and power application fields. It is well suited for applications requiring high current in a low-profile package, such as in the switch-mode power supplies of automobiles, household appliances, and factory machinery. Additionally, due to its low ON-resistance and steep output characteristics, it is popular in motor control applications such as variable frequency drives and AC inverters.
In conclusion, the STP21NM50N is a versatile and reliable power MOSFET. It offers a perfect balance of power, low-resistance, and fast switching speed, making it suitable for a wide range of applications. With its low profile package, it is suitable for applications with limited space, such as automotive and industrial power supplies.
The specific data is subject to PDF, and the above content is for reference
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