STP28N60M2 Allicdata Electronics
Allicdata Part #:

497-14220-5-ND

Manufacturer Part#:

STP28N60M2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 24A TO-220
More Detail: N-Channel 600V 24A (Tc) 170W (Tc) Through Hole TO-...
DataSheet: STP28N60M2 datasheetSTP28N60M2 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 170W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Series: MDmesh™ II Plus
Rds On (Max) @ Id, Vgs: 150 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STP28N60M2 is a power MOSFET manufactured by STMicroelectronics. This device is used in a variety of applications, from high-precision power regulation to high power switching. In this article, we\'ll take a look at the characteristics, application fields, and working principle of the STP28N60M2 power MOSFET.

STP28N60M2 Description and Features

The STP28N60M2 is a high voltage, fast switching, low on-resistance power MOSFET. It is rated for a maximum drain-to-source voltage of 600 VDC, a maximum drain current of 12 A, and a total gate charge of 350 nC. It also has a maximum junction temperature of 175ºC, a maximum power dissipation of 61 Watts, and a thermal resistance of 19 K/W. The STP28N60M2 is also RoHS-compliant and comes in a TO-220F package.

STP28N60M2 Applications

Due to its high voltage and high current handling capabilities, the STP28N60M2 is an ideal choice for a wide range of power regulation and switching applications. It can be used in power supplies, DC-DC converters, LED lighting, motor control, and power conversion. It can also be used in high-profile audio applications, such as amplifiers and other audio equipment.

STP28N60M2 Working Principle

The STP28N60M2 uses the principle of a metal-oxide-semiconductor field effect transistor (MOSFET). This type of transistor consists of three elements - a gate, a source, and a drain. The flow of current is controlled by the voltage applied to the gate. When a positive voltage is applied to the gate, the MOSFET will conduct and current will flow from the drain to the source. When the voltage is removed, the MOSFET will cease conducting and no current will flow.

In addition to its high voltage and current handling capabilities, the STP28N60M2 also has excellent switching characteristics. It has a fast switching speed and low on-resistance, which means it is able to rapidly switch on and off with minimal power loss. This makes it ideal for high efficiency applications where power savings are critical.

Conclusion

The STP28N60M2 is a high voltage, fast switching, low on-resistance power MOSFET. It has a wide range of applications, from high-precision power regulation and high power switching, to LED lighting and motor control. It utilizes the principle of a MOSFET, where a voltage applied to the gate allows current to flow between the source and the drain. With its excellent electrical characteristics and wide range of applications, the STP28N60M2 is an excellent choice for power management and high efficiency applications.

The specific data is subject to PDF, and the above content is for reference

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