Allicdata Part #: | 497-14220-5-ND |
Manufacturer Part#: |
STP28N60M2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 24A TO-220 |
More Detail: | N-Channel 600V 24A (Tc) 170W (Tc) Through Hole TO-... |
DataSheet: | STP28N60M2 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 170W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1370pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 37nC @ 10V |
Series: | MDmesh™ II Plus |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STP28N60M2 is a power MOSFET manufactured by STMicroelectronics. This device is used in a variety of applications, from high-precision power regulation to high power switching. In this article, we\'ll take a look at the characteristics, application fields, and working principle of the STP28N60M2 power MOSFET.
STP28N60M2 Description and Features
The STP28N60M2 is a high voltage, fast switching, low on-resistance power MOSFET. It is rated for a maximum drain-to-source voltage of 600 VDC, a maximum drain current of 12 A, and a total gate charge of 350 nC. It also has a maximum junction temperature of 175ºC, a maximum power dissipation of 61 Watts, and a thermal resistance of 19 K/W. The STP28N60M2 is also RoHS-compliant and comes in a TO-220F package.
STP28N60M2 Applications
Due to its high voltage and high current handling capabilities, the STP28N60M2 is an ideal choice for a wide range of power regulation and switching applications. It can be used in power supplies, DC-DC converters, LED lighting, motor control, and power conversion. It can also be used in high-profile audio applications, such as amplifiers and other audio equipment.
STP28N60M2 Working Principle
The STP28N60M2 uses the principle of a metal-oxide-semiconductor field effect transistor (MOSFET). This type of transistor consists of three elements - a gate, a source, and a drain. The flow of current is controlled by the voltage applied to the gate. When a positive voltage is applied to the gate, the MOSFET will conduct and current will flow from the drain to the source. When the voltage is removed, the MOSFET will cease conducting and no current will flow.
In addition to its high voltage and current handling capabilities, the STP28N60M2 also has excellent switching characteristics. It has a fast switching speed and low on-resistance, which means it is able to rapidly switch on and off with minimal power loss. This makes it ideal for high efficiency applications where power savings are critical.
Conclusion
The STP28N60M2 is a high voltage, fast switching, low on-resistance power MOSFET. It has a wide range of applications, from high-precision power regulation and high power switching, to LED lighting and motor control. It utilizes the principle of a MOSFET, where a voltage applied to the gate allows current to flow between the source and the drain. With its excellent electrical characteristics and wide range of applications, the STP28N60M2 is an excellent choice for power management and high efficiency applications.
The specific data is subject to PDF, and the above content is for reference
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