STP260N4F7

Gate Charge (Qg) (Max) @ Vgs:	67nC @ 10V
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	235W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5600pF @ 25V
Vgs (Max):	±20V
Series:	STripFET™
Vgs(th) (Max) @ Id:	4V @ 250µA
Rds On (Max) @ Id, Vgs:	2.2 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active

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STP260N4F7 Application Field and Working Principle

STP260N4F7 is an N-channel enhancement-mode field-effect transistor (FET). It belongs to the FET family of transistors and is a single-device of transistor type. It is designed with an optimized combination of on-resistance, gate charge, and power loss reducing feature. The device exhibits power dissipation and high-current handling capabilities that are ideal for use in low-voltage power MOSFETs and ultra-low-voltage applications.

Features

The device is an N-channel enhancement-mode FET and is ideal for use in high-current, low-voltage applications. This device features enhanced switching characteristics, low gate charge, low on-resistance, and high-current drive capability. Additionally, the device feature:

• 25V drain to source voltage (Vds)
• 150A drain current (Id)
• High frequency operation
• Low gate charge
• Low on-resistance
• Low power dissipation
• Enhanced body diode
• Improved thermal characteristics

Applications

STP260N4F7 can be used for a variety of applications in the power electronics industry. It is ideal for use in low-voltage power MOSFETs, ultra-low-voltage applications, and applications that require high-current drive capabilities. Examples of these applications include:

• Electric vehicles
• Motor controls
• High-end audio products
• Power supplies
• LEDs and PCBs
• Photovoltaic systems
• Uninterruptible power supply (UPS)

Working Principle

The STP260N4F7 is an N-channel enhancement-mode FET. A FET is a three-terminal device consisting of a source, a gate, and a drain. The source and the drain of the device are connected to an external circuit and the gate is connected to a control voltage. The device is designed so that the current flow through the device can be controlled by changing the gate voltage.When a positive gate voltage is applied to the device, the channels between the source and the drain are opened up, allowing current to flow from source to drain. As the gate voltage increases, the channel width increases, resulting in an increase in current flow.When a negative gate voltage is applied to the device, the channels between the source and the drain are pinched closed, preventing current flow. As the gate voltage decreases, the channel width decreases, resulting in a decrease in current flow.In addition, due to the low on-resistance of the device, the power loss in the device is minimized. This has the advantage of decreasing the overall power consumption of the system.

Conclusion

The STP260N4F7 is an N-channel enhancement-mode FET suitable for use in a variety of power electronic applications. Its optimized combination of on-resistance, gate charge, and power loss reducing feature makes it ideal for low-voltage power MOSFETs, ultra-low-voltage applications, and applications that require high-current drive capabilities. The device exhibits power dissipation and high-current handling capabilities and is designed with improved thermal characteristics.

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