STP23NM60N

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STP23NM60N is a single N-channel MOSFET, specifically designed for high and low-side switching applications. It is one of the most commonly used MOSFETs for high side and low side applications. It has a maximum input voltage of 23V and a powerful on-state RDS(on) of 0.8 ohm.

The STP23NM60N is an advanced N-channel enhancement-mode power MOSFET. This MOSFET uses the latest high voltage MOSFET transistor technology. It is designed to handle high power with low on-state resistance, good avalanche characteristics and excellent gate charge properties. It is also designed to have a good thermal resistivity, and can be used in applications requiring high switching frequencies. The device also has excellent ESD protection.

The main application field of the STP23NM60N is high and low side switching applications. Such applications include DC-DC converters, power tools, home appliances, automotive and industrial products. It can also be used in lighting systems and power factor correction. Additionally, it can be used for very high voltage applications such as a solar power inverter circuit.

The working principle of the STP23NM60N is quite simple. When a positive voltage is applied to the gate, it will create an electric channel between the source and the drain. This electric channel will pull the negative charges from the drain. This in turn makes the output terminal at the drain to produce a positive voltage. This voltage can be used to drive power loads such as motors or other electronic components.

The STP23NM60N is a very efficient and reliable MOSFET device. It has an increased on-state RDS(on) and a maximum back voltage constructed on its drain current limiting. It also has an integrated anti-parallel diode with reverse blocking capability of 400V. It is also equipped with a low rise time and an ultra-low operating current. The device is ideal for applications that require high power switching, such as DC-DC converters.

In conclusion, the STP23NM60N is an advanced N-channel enhancement-mode power MOSFET. It is a single N-channel device specifically designed for high and low side switching applications. It has a maximum input voltage of 23V and a powerful on-state RDS(on) of 0.8 ohm. It is an efficient and reliable MOSFET device suitable for applications requiring high power switching such as DC-DC converters, power tools, home appliances, automotive, industrial products, lighting systems and power factor correction.

The specific data is subject to PDF, and the above content is for reference