STP25N80K5 Allicdata Electronics
Allicdata Part #:

497-13653-5-ND

Manufacturer Part#:

STP25N80K5

Price: $ 6.67
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 800V 19.5A TO220
More Detail: N-Channel 800V 19.5A (Tc) 250W (Tc) Through Hole T...
DataSheet: STP25N80K5 datasheetSTP25N80K5 Datasheet/PDF
Quantity: 743
1 +: $ 6.66540
10 +: $ 6.46544
100 +: $ 6.33213
1000 +: $ 6.19882
10000 +: $ 5.99886
Stock 743Can Ship Immediately
$ 6.67
Specifications
Vgs(th) (Max) @ Id: 5V @ 100µA
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Series: SuperMESH5™
Rds On (Max) @ Id, Vgs: 260 mOhm @ 19.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STP25N80K5 is a MOSFET from STMicroelectronics that is widely used in applications such as component switching, speed control, and other applications where fast, reliable switching is necessary. It is a high-speed, low-power transistor, that is designed to reduce switching losses and allow fast switching times. This makes it suitable for higher voltage applications, particularly in power applications.

The STP25N80K5 is a N-Channel Enhancement Mode Power MOSFET, which means that it is an active component and requires external power to switch on and off. It can also be referred to as an N-channel, Insulated Gate Bipolar Transistor (IGBT) as it is similar in function. The device can be switched off without the use of gate drive, making it an ideal choice for applications requiring low gate-bias and trigger drive.

The STP25N80K5 is a three-terminal device with one gate terminal, two source terminals, and one drain terminal. The gate terminal is used to control the voltage across the drain and source terminals, which in turn control the current flow through the channel. The gate terminal is usually connected to the gate voltage, which is typically between +5 V and 12 V, so that the device can be switched on and off accurately.

When the gate voltage is low, the MOSFET drains no current and it is said to be in the off state. When the gate voltage is raised, a continuous current is allowed to flow through the drain and source terminals, so that the MOSFET is said to be in the on-state. This controlled current flow is regulated by the gate voltage and the source-to-drain resistance. As the drain and source terminals are inversely proportional, the device can be used to switch from high to low voltage and vice versa.

The STP25N80K5 is a versatile device, offering very low On-resistance and fast switching speed, making it ideal for a wide range of applications, such as power supplies, motor speed control, and signal routing. It also offers a high-current continuous drain and current rating, meaning it is suitable for applications requiring high currents. Additionally, the device is capable of withstanding reverse voltage and is 1kV certified.

In summary, the STP25N80K5 is a fast and reliable N-Channel Enhancement Mode Power MOSFET, designed to be used in a variety of applications where high-speed, low-power switching is required. It is a cost-effective solution when compared to IGBTs and offers higher levels of performance. It is suitable for low voltage applications, such as motor speed control, and high voltage power applications, such as power supplies, due to its high-current continuous drain and current ratings.

The specific data is subject to PDF, and the above content is for reference

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