STP25NM50N Allicdata Electronics
Allicdata Part #:

497-4672-5-ND

Manufacturer Part#:

STP25NM50N

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 500V 22A TO-220
More Detail: N-Channel 500V 22A (Tc) 160W (Tc) Through Hole TO-...
DataSheet: STP25NM50N datasheetSTP25NM50N Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 160W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2565pF @ 25V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
Series: MDmesh™
Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The STP25NM50N MOSFET is a highly efficient and cost effective part of the STP25NM50N Power MOSFET series, specially designed for high current, voltage, and index applications. The device has been optimally designed to deliver low on-resistance and superior switching performance. This makes the STP25NM50N suitable for a wide variety of applications such as high current switching, power converters, DC-DC converters, solar cell processor and application where Ultra Low RDS(on) applications are required.

The STP25NM50N is a vertical MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with three terminals: drain, gate and source. The MOSFET is a type of transistor that relies on an electrostatic gate to control the flow of current through the device. The gate is insulated from the other two terminals and is connected to a voltage source. When a voltage is applied to the gate, a proportionate change in current is allowed to flow through the device. MOSFETs are sometimes referred to as “insulated gate transistors” because of the gate’s insulated nature.

The STP25NM50N is an N-channel MOSFET, meaning that the current is allowed to flow through a channel between the source and drain when a voltage is applied to the gate. The device’s built-in resistance, also known as RDS(on), is 2.8 ohm at maximum, making it ideal for applications that require high efficiency and a low power loss.

This type of MOSFET also features built-in temperature protection. To prevent the device from entering breakdown at extreme temperatures, the device is designed with an internal temperature sensor. The device shuts down in order to protect itself when it reaches a particular temperature limit.

The STP25NM50N is specifically designed for power applications. It is capable of handling large currents up to 25A and voltages up to 50V. Their high switching performance and low on-resistance also make them suitable for use in a variety of motor control, switching power supply and solar power inverter applications. The MOSFET also exists in various packages, from the smallest SOT223, to the larger SOT23, TO220 or the TO263.

This MOSFET is a highly efficient and cost effective option for a wide variety of applications, and its topologies are suitable for use in both high current and high voltage applications. The STP25NM50N is a proven solution for power management, motor control, switching power supply and solar power inverter applications.

The specific data is subject to PDF, and the above content is for reference

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