Allicdata Part #: | STP270N4F3-ND |
Manufacturer Part#: |
STP270N4F3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 40V 120A TO-220 |
More Detail: | N-Channel 40V 120A (Tc) 330W (Tc) Through Hole TO-... |
DataSheet: | STP270N4F3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 330W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
Series: | STripFET™ III |
Rds On (Max) @ Id, Vgs: | 2.9 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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STP270N4F3 is a single N-channel enhancement mode field-effect transistor (FET) produced by STMicroelectronics. It is an advanced power MOSFET suitable for high voltage and high current applications, such as bridge rectifiers, DC to DC converters, and motor control systems. This device features a high breakdown voltage, low on-state resistance, and a wide Safe Operating area.
Application Field
Given its high voltage and high current capabilities, the STP270N4F3 is used for power switching applications. It is commonly used as a high voltage power switch in DC to DC converters as well as motor control systems. It is also used in bridge rectifiers, high voltage AC power supplies, and power long-distance transmission.
Working Principle
The STP270N4F3 works by allowing the flow of current through the device when gate voltage is applied to the gate terminal. When voltage is applied to the gate, a channel is formed between the source and the drain, allowing current to flow through the device. The current is proportional to the gate voltage, creating an adjustable current path. As the gate voltage is increased, the current flow through the device increases as well.
When no voltage is applied to the gate, the transistor is in the OFF-state, and no current flows through the device. This makes it suitable for applications that require high voltage and high current capabilities, as the device can be easily turned OFF and ON by applying the required gate voltage.
The STP270N4F3 also has a high breakdown voltage, which allows it to withstand high voltages. This makes it ideal for applications that require high voltage and high current capabilities, such as bridge rectifiers, DC to DC converters, and motor control systems.
The STP270N4F3 is also known for its low on-state resistance. This feature allows the device to have a low power dissipation, which makes it ideal for power switching applications that require high current and low power loss. This feature also makes the device suitable for applications where heat dissipation is an issue.
Finally, the STP270N4F3 has a wide Safe Operating Area (SOA). This feature ensures that the device will not operate outside of its design parameters, allowing it to be safely and reliably used in a variety of applications.
In conclusion, the STP270N4F3 is an advanced power MOSFET that is suitable for high voltage and high current applications. Its high breakdown voltage, low on-state resistance, and wide Safe Operating Area make it ideal for power switching applications that require both high voltage and high current capabilities.
The specific data is subject to PDF, and the above content is for reference
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