STP28N65M2

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The STP28N65M2 is a N-channel enhancement mode mosfet (MOSFET) made of silicon. It has a drain-source voltage up to 650V, a drain current up to 28A, and a R_ds(on) as low as 0.184Ω. It is a wide V_gs device allowing operation with a V_gs ranging from -4V to 12V, hence the STP28N65M2 could be used in different applications.

Application Fields

Due to its wide V_gs range, the STP28N65M2 can be used in many different application fields such as automotive, industrial, consumer and home appliances.

• In the automotive field, the STP28N65M2 is used for switching and po wer management due to its high drain current and low on-resistance.
• In the industrial field, the STP28N65M2 is used as a high power switch to control the flow of current in circuits operating at high voltage.
• In the consumer and home appliances fields, the STP28N65M2 can be used as a switch to control the on/off functions of a variety of devices including light bulbs, motors and heaters.

Working Principles

The working principles of the STP28N65M2 can be divided into two parts, the operation and the control.

Operation

In operation, the STP28N65M2 uses the correct operating voltage range to turn on or to switch-off an electrical current. A high drain-source voltage can turn on enough current that it can be used as a switch. Conversely, a low drain-source voltage can turn off the current, hence the MOSFET functions as an on/off switch.

Control

The STP28N65M2 can be controlled by adjusting the Gate-Source-Voltage (V_GS). A high V_GS will increase the drain current through the channel and turn on the current, while a low V_GS will decrease the drain current through the channel and turn off the current. The V_GS can be positive or negative.

The gate-source voltage can be controlled by either its own bias or an external circuit. A bias can be set to establish a desired initial V_GS. Alternatively, an external circuit is an unambiguous way of setting the gate-source voltage. This external circuit should provide sufficient current to drive the gate either to an high or low level.

Conclusion

The STP28N65M2 is a N-channel enhancement mode MOSFET with a drain-source voltage up to 650V, drain current up to 28A, and a R_ds(on) as low as 0.184Ω. The STP28N65M2 can be used in many different application fields such as automotive, industrial, consumer and home appliances. It can be controlled by adjusting the Gate-Source-Voltage (V_GS). A bias can be set to establish a desired initial V_GS. Alternatively, an external circuit is an unambiguous way of setting the gate-source voltage.

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