
Allicdata Part #: | 497-15559-5-ND |
Manufacturer Part#: |
STP28N65M2 |
Price: | $ 2.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V 20A TO220 |
More Detail: | N-Channel 650V 20A (Tc) 170W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 2.30000 |
10 +: | $ 2.23100 |
100 +: | $ 2.18500 |
1000 +: | $ 2.13900 |
10000 +: | $ 2.07000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 170W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1440pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Series: | MDmesh™ M2 |
Rds On (Max) @ Id, Vgs: | 180 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STP28N65M2 is a N-channel enhancement mode mosfet (MOSFET) made of silicon. It has a drain-source voltage up to 650V, a drain current up to 28A, and a Rds(on) as low as 0.184Ω. It is a wide Vgs device allowing operation with a Vgs ranging from -4V to 12V, hence the STP28N65M2 could be used in different applications.
Application Fields
Due to its wide Vgs range, the STP28N65M2 can be used in many different application fields such as automotive, industrial, consumer and home appliances.
- In the automotive field, the STP28N65M2 is used for switching and po wer management due to its high drain current and low on-resistance.
- In the industrial field, the STP28N65M2 is used as a high power switch to control the flow of current in circuits operating at high voltage.
- In the consumer and home appliances fields, the STP28N65M2 can be used as a switch to control the on/off functions of a variety of devices including light bulbs, motors and heaters.
Working Principles
The working principles of the STP28N65M2 can be divided into two parts, the operation and the control.
Operation
In operation, the STP28N65M2 uses the correct operating voltage range to turn on or to switch-off an electrical current. A high drain-source voltage can turn on enough current that it can be used as a switch. Conversely, a low drain-source voltage can turn off the current, hence the MOSFET functions as an on/off switch.
Control
The STP28N65M2 can be controlled by adjusting the Gate-Source-Voltage (VGS). A high VGS will increase the drain current through the channel and turn on the current, while a low VGS will decrease the drain current through the channel and turn off the current. The VGS can be positive or negative.
The gate-source voltage can be controlled by either its own bias or an external circuit. A bias can be set to establish a desired initial VGS. Alternatively, an external circuit is an unambiguous way of setting the gate-source voltage. This external circuit should provide sufficient current to drive the gate either to an high or low level.
Conclusion
The STP28N65M2 is a N-channel enhancement mode MOSFET with a drain-source voltage up to 650V, drain current up to 28A, and a Rds(on) as low as 0.184Ω. The STP28N65M2 can be used in many different application fields such as automotive, industrial, consumer and home appliances. It can be controlled by adjusting the Gate-Source-Voltage (VGS). A bias can be set to establish a desired initial VGS. Alternatively, an external circuit is an unambiguous way of setting the gate-source voltage.
The specific data is subject to PDF, and the above content is for reference
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