STP2N80K5 Allicdata Electronics
Allicdata Part #:

497-14279-5-ND

Manufacturer Part#:

STP2N80K5

Price: $ 0.55
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 800V 2A TO220
More Detail: N-Channel 800V 2A (Tc) 45W (Tc) Through Hole TO-22...
DataSheet: STP2N80K5 datasheetSTP2N80K5 Datasheet/PDF
Quantity: 1000
1 +: $ 0.55000
10 +: $ 0.53350
100 +: $ 0.52250
1000 +: $ 0.51150
10000 +: $ 0.49500
Stock 1000Can Ship Immediately
$ 0.55
Specifications
Vgs(th) (Max) @ Id: 5V @ 100µA
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 45W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 100V
Vgs (Max): 30V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
Series: SuperMESH5™
Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STP2N80K5 is a single N-channel Field Effect Transistor (FET). FETs are devices used to control electrical signals through the movement of electrons in a conducting channel. The STP2N80K5 is made of a silicon substrate, layered with a thin film of polysilicon gate, an oxide layer, and the drain and source regions. This type of FET is commonly used in a variety of applications due to its core advantages, such as being able to use three connections instead of the traditional four connections.

The working principle of STP2N80K5 is based on the electric field effect. When a voltage is applied to the gate, an electric field is generated which modulates the electrical conduction through the device. This means that the current passing through the device can be controlled by changing the gate voltage, i.e. the gate acts as a switch. Additionally, the size of the gate dictates the size of the electric field and thus the resistance. As a result, the device can be used to control the current and voltage in a variety of applications.

The STP2N80K5 can be used for a variety of applications including power management, analog signal processing and digital logic. It can be used in conjunction with other FETs and components to control the current, voltage and flow of electrons in a circuit. The STP2N80K5 can also be used as a switch for transistors in digital logic. In this application, the transistor can be used to control the on/off state of a digital output. The STP2N80K5 is especially useful when trying to control high power applications as it is ideal for high current and high voltage applications.

The STP2N80K5 is also used in analog applications such as amplifiers and oscillators. In an amplifier, the STP2N80K5 can act as a switch to control the current flow and thus control the output of the amplifier. In an oscillator, it can be used as a switch to control the frequency of the oscillation. In both applications, the STP2N80K5 can be used to increase the accuracy and precision of the output.

In addition, STP2N80K5 can be used in power management applications. This can be used to control the power consumption of devices by regulating the amount of current and voltage. In this way, the STP2N80K5 can be used to improve the efficiency of devices by reducing the overall power consumption.

The STP2N80K5 also has a number of other applications. It can be used for data transmission, AC to DC power conversion, power switches and more. Overall, the STP2N80K5 is a versatile and reliable FET that can be used in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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