Allicdata Part #: | 497-5785-2-ND |
Manufacturer Part#: |
STSJ100NH3LL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 30V 25A PWR8SOIC |
More Detail: | N-Channel 30V 100A (Tc) 3W (Ta), 70W (Tc) Surface ... |
DataSheet: | STSJ100NH3LL Datasheet/PDF |
Quantity: | 1000 |
Series: | STripFET™ III |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 3.5 mOhm @ 12.5A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 4.5V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 4450pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 3W (Ta), 70W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOIC-EP |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
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The STSJ100NH3LL is an insulated gate bipolar transistors (IGBTs) that are commonly used for high- and low-side power switches. IGBTs are versatile devices that can be used for both low and high voltage applications. The STSJ100NH3LL is a silicon-based IGBT with a high current rating of up to 100A.
The STSJ100NH3LL is a single-ended low-saturation voltage device that is designed specifically for motor control, lighting and power conversion applications. The device has an integrated anti-parallel Freewheeling diode and is available in a variety of package configurations. The device features fast turn-off and low saturation voltage, making it ideal for power switching applications.
The STSJ100NH3LL device is designed to use a miniaturized N-channel MOSFET in place of the traditional collector-emitter bipolar junction transistor (BJT) of a conventional BJT-IGBT. This has the benefit of reducing the device’s overall size. The device is also optimized for operation at high frequencies, making it suitable for applications such as DC-AC converters.
The working principle of the STSJ100NH3LL is similar to that of a conventional IGBT. It is a four-terminal device with a source, gate and drain attached to an insulated gate, as well as a body attached to the drain. When an appropriate current is passed through the gate, the transistor’s internal resistance decreases, allowing current to flow from the source to the drain. The insulated gate prevents the current from overflowing, providing voltage isolation between the terminals.
The STSJ100NH3LL is a robust power switching IGBT that is suitable for a variety of applications. It is ideal for the motor control, lighting and power conversion markets due to its low saturation voltage and fast turn-off. Moreover, its integrated Freewheeling diode and miniaturized design make it an attractive option for designers looking to reduce PCB space. With its combination of features, the STSJ100NH3LL provides a cost-effective solution for power switching applications.
The specific data is subject to PDF, and the above content is for reference
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