STSJ50NH3LL Allicdata Electronics
Allicdata Part #:

497-4755-2-ND

Manufacturer Part#:

STSJ50NH3LL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 30V 12A 8-PWRSOIC
More Detail: N-Channel 30V 50A (Tc) 3W (Ta), 50W (Tc) Surface M...
DataSheet: STSJ50NH3LL datasheetSTSJ50NH3LL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: STripFET™
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 965pF @ 25V
FET Feature: --
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Description

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The STSJ50NH3LL is a popular single N-Channel MOSFET used for a wide range of applications. The device is a N-Channel MOSFET and it is capable of operating with very low gate to source voltages and currents. It is widely used in power management, switching and control applications.

As with all Field Effect Transistors, the STSJ50NH3LL operates by controlling the flow of charge carriers, in this case electrons, between two terminals. The two terminals, known as the source and drain, are responsible for controlling the flow of current. The third terminal, known as the gate, is used to control the flow of charge carriers between the source and drain. By applying a positive voltage to the gate, the charge carriers are allowed to flow between the source and the drain, while a negative voltage reduces the flow of charge carriers.

The STSJ50NH3LL device is a particularly popular MOSFET due to its low on-state resistance, low input capacitance and high peak current capability. It is commonly used in DC-DC converters, motor control applications, switching regulators and power management applications. Its low on-state resistance gives it superior energy efficiency and its low input capacitance makes it ideal for high-speed switching.

In motor control applications, the STSJ50NH3LL is used to switch the current in an electric motor. The MOSFET is connected to an electric motor, such as a DC motor, and the electrical current is controlled by the gate voltage. By applying different voltages to the gate of the MOSFET, the rate at which the current flows through the motor can be changed. This enables the motor to be controlled more closely, and can be used to create different levels of torque.

In power management applications, the STSJ50NH3LL is used as a switch to control the flow of electrical current between different components in a circuit. The MOSFET is connected to a power supply and the gate voltage is used to switch the current flowing through the circuit. The low on-state resistance of the MOSFET ensures high efficiency and the low input capacitance allows for high switching frequencies.

In switching regulator applications, the STSJ50NH3LL is used to control the current flowing into a load. The MOSFET is connected to a power supply and the gate voltage is used to switch the current. By adjusting the gate voltage, the amount of current flowing through the load can be controlled. This allows for greater control over the output voltage and current, and can be used to improve the efficiency of power supplies.

The STSJ50NH3LL is a popular single N-Channel MOSFET used for a wide range of applications. It is capable of very low gate to source voltages and currents and can be used in a variety of applications such as power management, motor control, switching regulators and DC-DC converters. Its low on-state resistance, low input capacitance and high peak current capability make it ideal for a variety of high-performance applications.

The specific data is subject to PDF, and the above content is for reference

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