Allicdata Part #: | STSJ100NHS3LL-ND |
Manufacturer Part#: |
STSJ100NHS3LL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 30V 20A PWR8SOIC |
More Detail: | N-Channel 30V 100A (Tc) 3W (Ta), 70W (Tc) Surface ... |
DataSheet: | STSJ100NHS3LL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | STripFET™ III |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 4.2 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 4.5V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 4200pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 3W (Ta), 70W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOIC-EP |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
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The STSJ100NHS3LL is a monolithic single N-channel depletion-mode insulated gate field effect transistor (IGFET). It is designed for audio, power and motor control applications, providing a cost-effective solution for high-voltage, high-power and low-leakage devices.
The STSJ100NHS3LL features a 25V drain breakdown voltage, excellent ESD protection and a low on-state resistance. The device is suitable for switching applications and can be operated up to a frequency of 120MHz.
The working principle of the STSJ100NHS3LL is based on the field effect transistors concept, where the gate-source voltage controls the flow of current through the device. When a voltage is applied to the gate, it generates an electric field between the gate and the source. The electric field controls a conductive channel between the source and the drain, allowing current to flow through the device.
The STSJ100NHS3LL is a single N-channel depletion-mode insulated gate field effect transistor (IGFET). The device operates at 25V drain breakdown voltage, excellent ESD protection and low on-state resistance. It has a wide range of applications in audio, power, and motor control applications, where its cost-effectiveness and high-performance make it a suitable choice.
In audio applications, the STSJ100NHS3LL is used to accurately and reliably adjust audio volume, frequency response, and phase levels. It can also be used to adjust the sound pressure level of audio speakers. In power control applications, it is used to control the power supply voltage and current, as well as allowing the user to regulate the output voltage and current.
In addition, the STSJ100NHS3LL is also used in motor control applications, where its high-voltage and stable operation ensures precise control over the motor\'s speed, direction, and other parameters. Furthermore, the device can be used in high-efficiency power conversion circuits, providing a wide range of control options.
To operate, the STSJ100NHS3LL requires gate-source voltage which controls the conduction of current through the device and is achieved by applying voltage to the gate terminal. When in operation, the device can be operated up to a frequency of 120MHz and produces an output current of 25V drain breakdown voltage, excellent ESD protection and low on-state resistance.
In conclusion, the STSJ100NHS3LL is a single N-channel depletion-mode insulated gate field effect transistor (IGFET) that is used in audio, power, and motor control applications. The device operates at 25V drain breakdown voltage, excellent ESD protection and low on-state resistance, making it a cost-effective solution for high-performance applications. Furthermore, the device operates up to a frequency of 120MHz, providing precise control over the output voltage and current.
The specific data is subject to PDF, and the above content is for reference
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