STT3P2UH7 Allicdata Electronics
Allicdata Part #:

497-15156-2-ND

Manufacturer Part#:

STT3P2UH7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET P-CH 20V 3A SOT23-6
More Detail: P-Channel 20V 3A (Tc) 1.6W (Tc) Surface Mount SOT-...
DataSheet: STT3P2UH7 datasheetSTT3P2UH7 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1.6W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V
Series: STripFET™
Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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STT3P2UH7 is a single N-channel MOSFET which is suitable for use in general purpose applications. It has a drain to source voltage of -20V to -60V, and a drain current of -3A (continuous). It is also offered in SOIC-7 and SOP-8 packages.

This MOSFET is used in various applications as it offers excellent switching characteristics, good frequency response, and low off-state leakage current. It is mainly used as a switch, as it can control the current flow through it, by varying its gate voltage. The gate of this MOSFET acts as an insulated gate, which acts like an insulator for the signal line (between the source and the drain) and the MOSFET structure.

TheWorking principle of STT3P2UH7 is relatively simple. There is a voltage somewhere between the drain and the source of the MOSFET, this is referred to as the “threshold voltage”. This threshold voltage will determine whether or not the MOSFET is conducting current or not. When the voltage across the drain and source is above the threshold voltage, then the MOSFET will conduct, when it\'s below the threshold voltage it will not. So, by varying the gate voltage, the threshold voltage can be altered, and thus the state of the MOSFET will be changed accordingly (on or off).

TheApplication fields of STT3P2UH7 are very wide. It is mainly used in switching circuits, as well as in amplifiers, linear regulators, voltage clamping circuits, and as a switch in electronic circuits. It can also be used as an input stage in power amplifiers, as a buffer amplifier, or as a switch in biomedical circuits. It is also used in motor control, robotics, and industrial automation. It is also used in the Telecommunication industry for applications such as DC-DC converters, power supplies, switching applications, network interface cards, and RF amplifiers.

In summary, STT3P2UH7 is an N-channel MOSFET which is suitable for general purpose applications. Its working principle is relatively simple, and it is mostly used as a switch. Its application fields are quite wide, ranging from switching circuits to power amplifiers, voltage clamping circuits, and motor control applications. Therefore, it is a very useful and versatile MOSFET.

The specific data is subject to PDF, and the above content is for reference

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