Allicdata Part #: | 497-8046-2-ND |
Manufacturer Part#: |
STT3PF30L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET P-CH 30V 2.4A SOT23-6 |
More Detail: | P-Channel 30V 2.4A (Tc) 1.6W (Tc) Surface Mount SO... |
DataSheet: | STT3PF30L Datasheet/PDF |
Quantity: | 1000 |
Series: | STripFET™ II |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 2.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 165 mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 4.5V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 420pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1.6W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-6 |
Package / Case: | SOT-23-6 |
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The STT3PF30L is a fast symmetric N-channel Enhancement Mode Field-Effect Transistor (EMFET) with a low geometry cell. It is designed for use in advanced switching and linear applications such as low current consumption, low noise amplifier design and power management. The device offers very low on-resistance, high switching speed and high gate-source breakdown voltage. The STT3PF30L is offered in a space-saving PowerFLAT™5x6 package.
Features
The STT3PF30L offers several features that make it suitable for various applications. These features include:
- Very low on-resistance
- High switching speed
- High gate-source breakdown voltage
- Wide drain-source voltage
- Wide operating temperature range
- Space-saving PowerFLAT™5x6 package
Application fields
The STT3PF30L can be used in many different applications. These include low current consumption, low noise amplifier design, and power management, among many others. It is particularly suitable for high-efficiency switched-mode power supplies, motor controllers, LED lighting and LED driver applications. It is also suited to inverter and precision DC-to-DC converter designs, and RF amplifiers.
Working principle
The STT3PF30L is an N-channel EMFET device which is designed for switching and linear applications. It has an input gate, a source and a drain, and a control element (the gate). When a current is applied to the input gate, it turns on the drain-source channel and enables current to flow from the source to the drain. The amount of current that can flow is determined by the gate-source voltage, which controls the gate-drain channel. In applications such as low current consumption, low noise amplifier design and power management, the STT3PF30L\'s low on-resistance and high switching speed makes it an ideal choice.
In applications such as LED lighting and driver applications, the STT3PF30L\'s high gate-source breakdown voltage helps to ensure that the device can withstand the large voltage transients typically seen in such circuits. In inverters and precision DC-to-DC converters, the device\'s wide drain-source voltage enables the efficient conversion between two voltage levels. Finally, in RF amplifiers, the device\'s space-saving PowerFLAT™5x6 package makes it ideal for designs which need to minimize size and weight.
The STT3PF30L is a high performance EMFET device which offers many features that make it suitable for a variety of applications. Its low on-resistance, high switching speed, high gate-source breakdown voltage, wide drain-source voltage, wide operating temperature range and space-saving PowerFLAT™5x6 package make it an ideal choice for applications such as low current consumption, low noise amplifier design, power management, LED lighting and driver applications, inverter and precision DC-to-DC converter designs, and RF amplifiers.
The specific data is subject to PDF, and the above content is for reference
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