Allicdata Part #: | STT3PF20V-ND |
Manufacturer Part#: |
STT3PF20V |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET P-CH 20V 2.2A SOT23-6 |
More Detail: | P-Channel 20V 2.2A (Tc) 1.6W (Tc) Surface Mount SO... |
DataSheet: | STT3PF20V Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 600mV @ 250µA |
Package / Case: | SOT-23-6 |
Supplier Device Package: | SOT-23-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.6W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 315pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 4.7nC @ 4.5V |
Series: | STripFET™ II |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 1A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.7V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.2A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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STT3PF20V is a logic-level N-channel power MOSFET, which belongs to the family of field-effect transistors (FETs). It is most commonly used in low power applications such as power management solutions and load switching solutions. It has a typical gate-source threshold voltage of 2V and an on-resistance of 1.017Ω. In this article, we will discuss the application fields and working principles of STT3PF20V.
Application Fields
STT3PF20V can be used in a wide range of applications, including power management solutions and load switching solutions. It is particularly suitable for low power applications due to its low gate-source threshold voltage and on-resistance. It can be used to create simple power management solutions, such as switching between main power and a backup power supply. It can also be used for regulating the current flow in low power circuits.
STT3PF20V is also suitable for interfacing with small DC motors and other motor controllers, as it is able to provide accurate current control. It can be used in applications such as robotics, drones, and other mobile or stationary applications that require low power control. Other applications include driving small solenoid valves, light dimmers, and other peripheral solutions.
Working Principle
STT3PF20V is a MOSFET (metal-oxide-semiconductor field-effect transistor). FETs are a type of transistor which has a metal gate that is insulated from the channel of the device. A MOSFET is a type of FET which uses a metal-oxide gate insulator. The metal-oxide gate insulator prevents the electrons in the metal gate from directly passing through the channel into the substrate.
When voltage is applied to the gate, an electric field forms, which attracts electrons from the metal gate into the substrate. This effect is known as the “inversion layer”, and it increases the current flowing through the substrate. This current is known as the drain current, and can be controlled by changing the voltage applied to the gate.
The STT3PF20V has a typical gate-source threshold voltage of 2V, which means that a voltage of 2V must be applied to the gate in order to create an inversion layer and start the drain current. The on-resistance of the STT3PF20V is 1.017Ω, which indicates the amount of resistance between the drain and source when the device is turned on.
Conclusion
STT
The specific data is subject to PDF, and the above content is for reference
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