STU90N4F3

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The STU90N4F3 is a high performance Ultra-Low RDS Download (RDS(on)) N-Channel, which MOSFET is rated to handle a maximum drain to source current of 90A (Tc=25C) and a maximum drain to source voltage of 30V. Active Miller’s Gate Charge Structure (AGC) reduces feedback delay.

The STU90N4F3 belongs to a type of Transistor-FET, MOSFETs-Single. It is characterized by its high performance output, high current carrying capacity, low on-resistance, fast switching time, and low gate charge. This MOSFET is most commonly used in power management applications, such as synchronous rectification, DC-DC conversion, and high-frequency switching power supplies.

The STU90N4F3 MOSFET operates by using an input voltage applied to the Gate terminal to control the output voltage at the Source terminal. Unlike traditional bipolar transistors, which require a high current to be passed through the Base terminal to control the Collector current, the MOSFET operates by modulating its input voltage. This effectively reduces the control current significantly and results in much less power dissipation.

When a voltage is applied to the gate terminal, it generates an electric field across the oxide layer, which in turn generates a modulated gate current. This gate current modulates the electric field across the metal-oxide gate and the channel, resulting in a proportional output current (drain current).

The STU90N4F3 MOSFET has a very low gate charge and is typically rated at 8~14nC. This means that the MOSFET is able to switch between conducting and non-conducting states in a very short time, making it ideal for high-speed switching applications. It also has a very low on-resistance, which allows it to handle higher currents without significant increases in power dissipation.

The STU90N4F3 MOSFET is an ideal choice for high-speed, high-current applications such as synchronous rectification, DC-DC conversion, and high-frequency switching power supplies. Its low gate charge and low on-resistance provide excellent performance with minimal power dissipation, making it an excellent choice for power management applications.

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