Allicdata Part #: | 497-15046-5-ND |
Manufacturer Part#: |
STU9N65M2 |
Price: | $ 1.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V 5A IPAK |
More Detail: | N-Channel 650V 5A (Tc) 60W (Tc) Through Hole IPAK ... |
DataSheet: | STU9N65M2 Datasheet/PDF |
Quantity: | 914 |
1 +: | $ 1.21590 |
75 +: | $ 0.98171 |
150 +: | $ 0.88351 |
525 +: | $ 0.68719 |
1050 +: | $ 0.56938 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | IPAK (TO-251) |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 315pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Series: | MDmesh™ |
Rds On (Max) @ Id, Vgs: | 900 mOhm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
In the realm of transistor technology, STU9N65M2 is a significant advancement in the field of Field-Effect Transistor (FET). This new offering from NXP Semiconductors is the latest in their line of MOSFETs and is designed to have better and faster switching capabilities than the previous models. STU9N65M2 is a single FET, and its working principle is based on the idea that the gate terminal of the FET is modulated to control the current flowing through it.
Understanding how this single device works, it is important to understand the basics of how Field-Effect Transistors work. A FET works by modulating a gate voltage that controls the current flow between any two terminals (Source and Drain). This gate voltage affects the electric field of the FET and thus modulates the current flow. This is what makes the FETs so much faster than traditional transistors, as they can change their states or their output voltage quickly and precisely.
In terms of STU9N65M2, this single device is particularly suited for applications where fast operation is essential, such as in switching systems, analog circuits, and audio amplifiers. Due to its low operating temperature, it can also be used in automotive applications, such as this FET being used as a switch for controlling the operation of a DC motor controller, for example. STU9N65M2 is capable of switching at high frequencies and offers internal heat dissipation that removes heat from the die.
In terms of characteristics, STU9N65M2 has a drain-source voltage of 100V; a gate-source voltage of 20V; a drain current rating of up to 9.5A; a maximum power know rating of 120W; and an On resistance of 0.052Ω. This means that it can handle applications that require high voltage or power ratings, or those that require low-voltage operation.
Due to the nature of FETs, STU9N65M2 can also be used in applications such as voltage-mode power supplies and AC motor drives. This is thanks to its ability to handle high frequency switching and its ability to dissipate heat from the die.
STU9N65M2 is an incredibly useful technology, and a great example of the advances being made in transistor technology. It is perfect for applications that require fast switching, high voltage and power ratings, or low-voltage operation. With a low operating temperature, it can be used in a variety of different applications, from automotive applications to voltage-mode power supplies. STU9N65M2 is the perfect choice for anyone looking for an advantage in their electronics applications.
The specific data is subject to PDF, and the above content is for reference
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