STW52NK25Z Allicdata Electronics
Allicdata Part #:

497-4428-5-ND

Manufacturer Part#:

STW52NK25Z

Price: $ 3.14
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 250V 52A TO-247
More Detail: N-Channel 250V 52A (Tc) 300W (Tc) Through Hole TO-...
DataSheet: STW52NK25Z datasheetSTW52NK25Z Datasheet/PDF
Quantity: 1000
600 +: $ 2.86099
Stock 1000Can Ship Immediately
$ 3.14
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 150µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Series: SuperMESH™
Rds On (Max) @ Id, Vgs: 45 mOhm @ 26A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tube 
Description

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The STW52NK25Z is a type of MOSFET commonly used in industrial, power-management, automotive, and telecom applications. It is a single, N-channel device with a maximum drain-source current of 4A and drain-source voltage of 60V. MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) have the ability to operate with very low power dissipation, allowing them to be used in extremely small switching circuits and battery-operated electronics. This makes them ideal for both power-management and noise-sensitive applications.

Application Field

The STW52NK25Z is commonly used in industrial, power-management, automotive, and telecom applications. It is used in power-switching circuits, such as AC/DC power supplies, motor and speed control circuits, voltage regulators, and audio amplifiers. In the automotive industry, it is used in junction box circuits, starter motor control, fuel injection control, and airbag circuits. In telecom applications, it is used in line-card switching, active filtering, and pulse-width modulation.

Working Principle

MOSFETs are field-effect transistors that have a very thin gate oxide layer between the gate and the channel. This allows a very small \'gate voltage\' to control a much larger voltage between the drain and source terminals. This is defined as the \'channel width modulation\' of the MOSFET.

This principle works by controlling the width of the narrow channel that is created between the drain and source terminals. By increasing the gate voltage, the width of the channel increases, enabling current to flow from drain to source. By decreasing the voltage, the width of the channel decreases, reducing current flow and thus turning the device "off."

This is advantageous for two reasons: first, it reduces power dissipation; and second, the size of the gate does not need to be reduced in proportion to the current it is controlling. This makes it possible to create very small switching elements that can control very high currents. The STW52NK25Z is an excellent example of this.

Conclusion

The STW52NK25Z is a single, N-channel MOSFET that is commonly used in industrial, power-management, automotive, and telecom applications. It is able to operate with very low power dissipation, which makes it ideal for use in noise-sensitive circuits, as well as high-current power-switching circuits. This is possible due to its unique working principle, which is based on the channel width modulation of the MOSFET.

The specific data is subject to PDF, and the above content is for reference

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