STW56N60M2-4 Allicdata Electronics
Allicdata Part #:

497-15578-5-ND

Manufacturer Part#:

STW56N60M2-4

Price: $ 5.66
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 52A TO247-4
More Detail: N-Channel 600V 52A (Tc) 350W (Tc) Through Hole TO-...
DataSheet: STW56N60M2-4 datasheetSTW56N60M2-4 Datasheet/PDF
Quantity: 247
1 +: $ 5.66370
10 +: $ 5.49379
100 +: $ 5.38052
1000 +: $ 5.26724
10000 +: $ 5.09733
Stock 247Can Ship Immediately
$ 5.66
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-4
Supplier Device Package: TO-247-4L
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 350W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
Series: MDmesh™ M2
Rds On (Max) @ Id, Vgs: 55 mOhm @ 26A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STW56N60M2-4 is a N-channel MOSFET transistor that belongs to the STW family of transistors from STMicroelectronics. The STW56N60M2-4 is a single-MOSFET transistor that has an activemaximum power dissipation of 180 Watts. It is designed to work within a wide range of supply voltages and requires low RDS(on) levels to ensure consistent transistor performance. This single transistor can be used in combination with other transistors to build a wide range of circuits, including RF power and control circuits, power switch circuits, voltage regulator circuits, and audio amplifier circuits.

The STW56N60M2-4 is a high-performance device that has numerous key features. These features include fast switching and low gate charge, a high drain-source breakdown voltage of 600 Volts, low RDS(ON) for efficient operation and a low total gate charge for more efficient power dissipation. Additionally, it has a high operating frequency and is capable of delivering up to 160 Amps of current. The device also features a temperature-independent operation, which ensures that the device remains stable in extreme heat conditions.

The working principle of the STW56N60M2-4 is straightforward. The transistor is designed so that when a positive voltage is applied to the gate, a current flows from the drain to the source. This current is then amplified, resulting in a signal that is either amplified or attenuated, depending on the voltage applied. The signal is then passed along to the load, or driven, circuit. Depending on the operating frequency, the signal can be at audio or video frequency, or any other signal type desired.

One of the most common applications of the STW56N60M2-4 is in the field of audio and video amplifiers. As it is a single-MOSFET transistor, it can be used to build high-end audio and video amps that can drive large speakers or amplifiers with minimal distortion. Additionally, the STW56N60M2-4 can be used for RF power amplifiers, power switches, and voltage regulators as well. It can also be used in power supply circuits, allowing for efficient and safe power delivery to numerous electronic devices.

The STW56N60M2-4 is a highly versatile MOSFET transistor that brings many performance benefits to a wide variety of applications. As it is suited for a wide range of supply voltages and offers low RDS(on) levels, the STW56N60M2-4 can be used in a multitude of circuits and systems. Its high-performance features ensure that the signal remains consistent and clean, reducing the need for extra components or circuits. With its temperature-independent operation, the transistor also ensures reliable and consistent performance, making it ideal for use in applications that are exposed to extreme temperatures.

The specific data is subject to PDF, and the above content is for reference

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