Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-247-4
Supplier Device Package:	TO-247-4L
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	358W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3900pF @ 100V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	93nC @ 10V
Series:	MDmesh™ M2
Rds On (Max) @ Id, Vgs:	62 mOhm @ 24.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	49A (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

STW56N65M2-4 application field and working principle

Transistors - FETs, MOSFETs - Single The power MOSFET STW56N65M2-4 is a high-current, low-voltage type of MOSFET designed to be used primarily in power switching applications. It is a fairly popular and reliable component which, when used correctly, can be expected to operate in a variety of operating environments. In this article, we will discuss the application fields and working principle of the STW56N65M2-4.

Application field

TheSTW56N65M2-4 is primarily used in power switches for DC-DC converters, motor drives and power supplies. The device is an ideal choice for the power switch of a power supply because it can easily handle large currents and high voltage switching. Furthermore, the device has a very low on-resistance and has low power consumption, making it extremely efficient when used for power switching applications. TheSTW56N65M2-4 is also suitable for switching the light load current in general purpose inverter applications. In these applications, the device can be used to switch the light load current with low on-resistance and low power consumption.

Working principle

TheSTW56N65M2-4is a MOSFET (metal-oxide-semiconductor field-effect transistor), which is a type of transistor used for power switching applications. In a MOSFET, a metal oxide layer is used to insulate the transistor\'s gate, which is then connected to the source and drain terminals of the transistor. In order to switch on the MOSFET, a voltage is applied across the gate terminal, which causes the metal oxide layer to allow current to flow from the drain to the source terminals.When the voltage applied across the gate terminal increases, the metal oxide layer allows more current to flow from the drain to the source and the MOSFET is in the "on" state. As the voltage decreases, the metal oxide layer restricts current flow from the drain to the source and the MOSFET is in the "off" state.TheSTW56N65M2-4is a very popular and reliable MOSFET which is capable of handling large currents and high voltage switching. Furthermore, the device features low on-resistance and low power consumption, making it highly efficient when used for power switching applications.

Conclusion

The STW56N65M2-4 is a reliable and efficient power MOSFET which is designed to be used primarily in power switching applications. The device is capable of handling large currents and high voltage switching and features a low on-resistance and low power consumption. This makes it ideal for use in power switches for DC-DC converters, motor drives and power supplies, as well as for switching the light load current in general purpose inverter applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description