SUM23N15-73-E3 Discrete Semiconductor Products

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The SUM23N15-73-E3 is a transistor specifically designed for low-capacity, low-power applications. This transistor is a variation of a Field Effect Transistor (FET) called an Insulated Gate Bipolar Transistor (IGBT). An IGBT is an example of a power semiconductor device, meaning that it is capable of controlling a large amount of power.

IGBTs are classified as a hybrid between a MOSFET and a BJT. It is similar to a MOSFET in its structure, but on a physical level, the way it operates is more like a BJT. Because of its hybrid nature, IGBTs are able to combine the beneficial traits of both transistors to enable more power-handling and increased efficiency in power control applications.

Before the advent of IGBTs, power semiconductor devices had to be either a MOSFET or a BJT. MOSFETs could handle large current outputs and gate capacitance was low, but they had high on-state resistance and were not well-suited for high voltage applications. BJTs, on the other hand, had low on-state resistance, but their gate capacitance was high and current-handling capabilities were limited.

The SUM23N15-73-E3 IGBT is designed for a very specific application: low-capacity, low-power circuits. Its features include a low-on-state resistance of only 15Ω, a low gate capacitance of between 0.75 – 1.5pF, and a 500kHz operating frequency. This makes it ideal for circuit designs that require high levels of efficiency in their power up circuits. Additionally, the SUM23N15-73-E3 is designed for low-voltage applications, making it well-suited for low-voltage switching applications.

The SUM23N15-73-E3 IGBT works by using an insulated gate to control the flow of current between two terminals, creating a rectifier effect. This is similar to how a MOSFET works, except that instead of using an insulated gate, an IGBT uses two bipolar transistors to control current flow. This allows the transistor to achieve higher levels of efficiency because it is able to reduce the amount of current used to switch the device, resulting in lower power consumption.

The SUM23N15-73-E3 IGBT is ideal for low-power, low-capacity applications. It can be used in circuit designs requiring high levels of efficiency and is especially well-suited for low-voltage switching applications. Its features include a low on-state resistance, a low gate capacitance, and a high operating frequency, making it an ideal choice for many circuit designs.

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