SUM27N20-78-E3 Discrete Semiconductor Products

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The SUM27N20-78-E3 is a single N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) product from Diodes Inc. that has been used in a wide range of consumer electronics applications. This MOSFET is suitable for applications requiring high-speed switching or low-frequency power conversion capabilities. The SUM27N20-78-E3 can act as a controlled rectifier, rectifying alternating current (AC) and transforming it into direct current (DC). It can also be used as a switch or as a linear element in amplifier circuits.

Among its various features, the SUM27N20-78-E3 is notable for its low gate charge, allowing the device to switch quickly and efficiently, while consuming less power. It also features low threshold voltage, high drain-source breakdown voltage, and high dV/dt, resulting in excellent switching performance. Furthermore, the device has a high common mode transient immunity, offering superior protection against electromagnetic interference.

The SUM27N20-78-E3 is widely used in power management, lighting, automotive, and other consumer electronic applications. In power management applications, it is used to regulate the power supply and to generate pulse-width modulation (PWM) signals for controlling the speed and other operations of motors, and for controlling the brightness or intensity of LED lights. In lighting applications, it is used for dimming and for providing logic signals. In automotive applications, it is used for switching on and off the headlights and control of blinkers.

The SUM27N20-78-E3 leverages the working principle of a MOSFET, which is to control the flow of current between its source and drain terminals with an electrical signal applied to its gate terminal. The control of current flow is achieved by modifying the electric potential of the channel between source and drain terminals so that source is connected to the drain when voltage is applied to the gate terminal. The current between source and drain terminals is directly proportional to the voltage of the gate terminal, making the MOSFET a voltage-controlled device.

In the case of the SUM27N20-78-E3, the MOSFET is specifically designed for high-speed switching and low-frequency power conversion capabilities. This MOSFET has low gate charge, which ensures high-speed operations and low power consumption. Additionally, a low threshold voltage and high dV/dt helps to improve switching performance, while a high common mode transient immunity helps to provide superior protection against electromagnetic interference. This makes the SUM27N20-78-E3 an excellent choice for a wide range of consumer electronics applications.

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