Allicdata Part #: | SUM25P10-138-E3-ND |
Manufacturer Part#: |
SUM25P10-138-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 100V 16.7A D2PAK |
More Detail: | N-Channel 100V 16.7A (Tc) 3.75W (Ta), 88.2W (Tc) S... |
DataSheet: | SUM25P10-138-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 16.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 13.8 mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2110pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 3.75W (Ta), 88.2W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-263 (D2Pak) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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The SUM25P10-138-E3 transistor is a type of field effect transistor (FET) commonly used in electronic circuits. It is a N-Channel MOSFET that finds application in many areas including power supplies, motor drives and other power switching circuits. It offers superior performance compared to other types of transistors. The major advantage of this type of transistor is that it can deliver high current and voltage with relatively low power dissipation.
A field effect transistor is essentially a three-terminal device in which one terminal is the source, another is the drain, and the third is the gate. By applying voltage to the gate, you can control current flowing from the source to the drain. This type of transistor operates on the principle of the electric field effect, which was discovered by Julius Edgar Lilienfeld in 1925. This phenomenon is the basis for the operation of all FETs.
When a voltage is applied to the gate of the SUM25P10-138-E3, a thin layer of reverse-biased carrier accumulation is established between the drain and source electrodes which acts as a barrier to current flow. This layer effectively shields the source from the drain, and only a small amount of drain to source current can flow through the layer. As the gate voltage is increased, the barrier decreases and the drain-source current increases. This allows it to be used to control current and voltage in power switching circuits.
The SUM25P10-138-E3 transistor is ideally suited for many power electronics applications. It can be used in DC-to-DC converters for a wide range of power levels. It is also used in switching power supplies and inverters for motor control and other electro-mechanical devices. Its low on-state resistance and high Drain-to-Source voltage capabilities make it ideal for power switching applications. It can also be used in audio effects and other amplifying circuits.
The SUM25P10-138-E3 transistor is capable of handling significant power levels. It is rated at 25A and can handle up to 100V. Its low input capacitance and low gate charge make it suitable for high-speed switching applications. The compliant thermal resistance rating of 5°C/W, along with its low RDS (on) resistance and high breakdown voltage, make it ideal for high power applications.
The SUM25P10-138-E3 transistor combines excellent performance with a low price. It is readily available and can be purchased from many online and retail stores. Its wide range of applications, comfortable price, and reliable performance make it an excellent choice for power switching and other high power applications.
The specific data is subject to PDF, and the above content is for reference
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