| Allicdata Part #: | SUM80090E-GE3TR-ND |
| Manufacturer Part#: |
SUM80090E-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 150V 128A D2PAK |
| More Detail: | N-Channel 150V 128A (Tc) 375W (Tc) Surface Mount D... |
| DataSheet: |  SUM80090E-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D²PAK (TO-263) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 375W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3425pF @ 75V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 95nC @ 10V |
| Series: | ThunderFET® |
| Rds On (Max) @ Id, Vgs: | 9 mOhm @ 30A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 7.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 128A (Tc) |
| Drain to Source Voltage (Vdss): | 150V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The SUM80090E-GE3 is a new single channel enhancement-mode Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET.) It is specifically designed to provide customers with a device that allows them to control power at a very low voltage and current. This benefit makes the SUM80090E-GE3 a great choice for applications that require very low power, such as battery-powered devices and mobile phones. The device has a very low rank cut-off voltage and a low gate-source voltage.
The device package is environmentally friendly and easy-to-use. It offers excellent heat dissipation, low thermal resistance, and ease of use for soldering requirements. The device offers a low-footprint, small size, and very minimal board space requirements. This makes it perfect for applications where space saving is a priority.
One of the most important features of the SUM80090E-GE3 is its low on-resistance rating. This means that it can handle higher currents at lower voltages compared to similar MOSFETs. This allows it to provide superior current control and helps improve device efficiency. It also has a very low switching voltage, so it can operate at reduced performance levels if the ambient temperature is too high.
The device operates on a simple principle called the enhancement-mode operation. This means that it has a gate voltage that must be at least higher than the source voltage in order for the transistor to be in an "on" state. When the gate voltage is higher than the source voltage, the device then lets current flow through it. In this "on" state, the drain-to-source current is maximized. The SUM80090E-GE3 is designed to provide this "on" state at very low gate voltage and source voltage levels, which makes it perfect for applications that require low power.
The SUM80090E-GE3 is an ideal choice for applications where low power consumption is a must. Its low on-resistance rating, combined with its low gate voltage and source voltage requirements, make it a great choice for applications such as battery-powered and mobile devices. It is also a great choice for applications that require very low power levels and minimal board space.
The specific data is subject to PDF, and the above content is for reference
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