| Allicdata Part #: | SUM85N15-19-E3TR-ND |
| Manufacturer Part#: |
SUM85N15-19-E3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 150V 85A D2PAK |
| More Detail: | N-Channel 150V 85A (Tc) 3.75W (Ta), 375W (Tc) Surf... |
| DataSheet: |  SUM85N15-19-E3 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263 (D2Pak) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 3.75W (Ta), 375W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4750pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 19 mOhm @ 30A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 85A (Tc) |
| Drain to Source Voltage (Vdss): | 150V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The SUM85N15-19-E3 is a very powerful and unique type of transistor commonly used in electronic applications. The SUM85N15-19-E3 belongs to a family of transistors called Field Effect Transistors (FETs). A FET is a type of semiconductor device that can be used to control and amplify electrical signals.
The SUM85N15-19-E3 FET is a single, enhancement-mode transistor with an extremely low on-resistance. It has the unique feature of being both fast and highly efficient, making it perfect for many applications. The SUM85N15-19-E3 is also very reliable and can handle extreme currents and voltages with ease.
In terms of application fields, the SUM85N15-19-E3 is ideal for any applications that require high switching speeds, extremely low power consumption and large power-handling capabilities. It is often used in consumer applications such as gaming consoles and mobile devices, as well as more industrial applications such as power supplies and motor controllers. It can also be used in communication systems, where it provides a reliable and high-speed connection.
The working principle of the SUM85N15-19-E3 relies on the principle of an insulated-gate FET (IGFET). The FET is made up of two gates, a source and a drain. Applying a voltage to the gate causes an electric field that allows current to flow between the source and the drain. This flow of charge between the source and drain is what controls the output voltage.
The operation of the SUM85N15-19-E3 is fairly straightforward. When the gate is at a low voltage, the channel between the source and the drain is blocked, and the output voltage is zero. As the gate voltage is increased, the channel opens up and the output voltage increases.
Overall, the SUM85N15-19-E3 is an extremely efficient, high-performance transistor with many applications. Its features allow it to be used in consumer electronics as well as industrial and communication systems. Its operation is based on the concept of an insulated-gate FET, which is able to control and amplify electrical signals with a high degree of accuracy and efficiency.
The specific data is subject to PDF, and the above content is for reference
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