SUM85N03-06P-E3 Discrete Semiconductor Products |
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Allicdata Part #: | SUM85N03-06P-E3TR-ND |
Manufacturer Part#: |
SUM85N03-06P-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 85A D2PAK |
More Detail: | N-Channel 30V 85A (Tc) 3.75W (Ta), 100W (Tc) Surfa... |
DataSheet: | SUM85N03-06P-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D2Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.75W (Ta), 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3100pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 85A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SUM85N03-06P-E3 is a type of transistor referred to as a Field Effect Transistor (FET). It is a single n-channel MOSFET (metal-oxide-semiconductor field-effect transistor) and is designed for use in low and intermediate power applications. It has a fixed breakdown voltage of -30V, which means it has a low on-state resistance and high maximum drain current.
The SUM85N03-06P-E3 has a wide range of applications in electronics, including power amplifiers, voltage regulators, battery chargers, and power supplies. The device has excellent switching characteristics, making it ideal for use in an array of logic and circuit protection applications. It is also used in reverse power protection and hot-swapping systems.
The working principle behind the SUM85N03-06P-E3 is that a voltage is applied to its gate (input) terminal, which then controls the current flowing through its source and drain (output) terminals. The voltage applied to the gate directly affects the current flowing through the source and drain terminals. When the gate voltage is increased, the current flowing through the source and drain increases; when the gate voltage is decreased, the current flowing through the source and drain decreases.
The operation of the device is similar to that of a capacitor; a voltage is applied to the gate terminal and a change in the voltage will cause a corresponding change in the electric field across the channel. This change in electric field can cause an increase or decrease in the current flowing through the channel, depending on the type of field-effect transistor being used.
The SUM85N03-06P-E3 is a very useful transistor device due to its low on-state resistance, high maximum drain current, and excellent switching characteristics. It is used in a wide variety of applications, from power amplifiers to battery chargers. Its working principle is based on a voltage applied to the gate terminal, which then controls the current flowing through its source and drain terminals. By understanding the basic principles behind transistors and their various types, engineers are able to select the best device for their particular application.
The specific data is subject to PDF, and the above content is for reference
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