Allicdata Part #: | TK31E60WS1VX-ND |
Manufacturer Part#: |
TK31E60W,S1VX |
Price: | $ 4.94 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N CH 600V 30.8A TO-220 |
More Detail: | N-Channel 600V 30.8A (Ta) 230W (Tc) Through Hole T... |
DataSheet: | TK31E60W,S1VX Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 4.44087 |
Vgs(th) (Max) @ Id: | 3.7V @ 1.5mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 230W (Tc) |
FET Feature: | Super Junction |
Input Capacitance (Ciss) (Max) @ Vds: | 3000pF @ 300V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 86nC @ 10V |
Series: | DTMOSIV |
Rds On (Max) @ Id, Vgs: | 88 mOhm @ 15.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 30.8A (Ta) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TK31E60W,S1VX is a single N-Channel, Enhancement Mode, Power MOSFET transistor. It is a 4-pin device and is used in many applications where fast switching, high current handling, and excellent power efficiency are required. This device has a wide operating voltage range and is suitable for a variety of different types of electronics.
The N-Channel MOSFET transistor is one of the most commonly used types of transistor in modern electronics. Notably, it is the transistor most commonly used to regulate the amount of current that flows through circuits. It works by controlling the electrical signals that are sent to the circuit, thus allowing for precise regulation of the amount of current flowing through the device. This device is also capable of quickly switching between high and low voltage signals, which is why it is used in a variety of applications.
In the TK31E60W,S1VX, the gate of the transistor is connected to a gate voltage to control the flow of electrons. The source is connected to the current source while the drain is connected to the load. When an input voltage is applied to the gate, the transistor operates as an amplifier, allowing current to flow through the device . When the input voltage is below the threshold voltage, the flow is inhibited and the device acts as a switch.
In terms of applications, the TK31E60W,S1VX is the ideal choice for high performance systems that require fast switching and excellent power efficiency. For example, it can be used in motor controllers, LED lighting controllers, and charge controllers. Additionally, it can be used in a variety of power management systems, power supplies, motor drives, and in industrial automation applications where precise control is needed.
The TK31E60W,S1VX is extremely versatile due to its wide operating voltage range, high current-handling capabilities, and fast switching characteristics. This makes it ideal for a variety of different applications. Additionally, it is a highly efficient device that allows electrons to flow relatively free of resistance. This makes it an excellent choice for power systems that require efficient operation.
Overall, the TK31E60W,S1VX is a high-performance single N-Channel enhancement mode MOSFET transistor. It is suitable for a variety of applications that require fast switching, high current-handling, and excellent power efficiency. It is also capable of quickly switching between high and low voltage signals and is an ideal choice for power management, motor control, and industrial automation systems.
The specific data is subject to PDF, and the above content is for reference
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