TK31E60W,S1VX Allicdata Electronics
Allicdata Part #:

TK31E60WS1VX-ND

Manufacturer Part#:

TK31E60W,S1VX

Price: $ 4.94
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N CH 600V 30.8A TO-220
More Detail: N-Channel 600V 30.8A (Ta) 230W (Tc) Through Hole T...
DataSheet: TK31E60W,S1VX datasheetTK31E60W,S1VX Datasheet/PDF
Quantity: 1000
50 +: $ 4.44087
Stock 1000Can Ship Immediately
$ 4.94
Specifications
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 230W (Tc)
FET Feature: Super Junction
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Series: DTMOSIV
Rds On (Max) @ Id, Vgs: 88 mOhm @ 15.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The TK31E60W,S1VX is a single N-Channel, Enhancement Mode, Power MOSFET transistor. It is a 4-pin device and is used in many applications where fast switching, high current handling, and excellent power efficiency are required. This device has a wide operating voltage range and is suitable for a variety of different types of electronics.

The N-Channel MOSFET transistor is one of the most commonly used types of transistor in modern electronics. Notably, it is the transistor most commonly used to regulate the amount of current that flows through circuits. It works by controlling the electrical signals that are sent to the circuit, thus allowing for precise regulation of the amount of current flowing through the device. This device is also capable of quickly switching between high and low voltage signals, which is why it is used in a variety of applications.

In the TK31E60W,S1VX, the gate of the transistor is connected to a gate voltage to control the flow of electrons. The source is connected to the current source while the drain is connected to the load. When an input voltage is applied to the gate, the transistor operates as an amplifier, allowing current to flow through the device . When the input voltage is below the threshold voltage, the flow is inhibited and the device acts as a switch.

In terms of applications, the TK31E60W,S1VX is the ideal choice for high performance systems that require fast switching and excellent power efficiency. For example, it can be used in motor controllers, LED lighting controllers, and charge controllers. Additionally, it can be used in a variety of power management systems, power supplies, motor drives, and in industrial automation applications where precise control is needed.

The TK31E60W,S1VX is extremely versatile due to its wide operating voltage range, high current-handling capabilities, and fast switching characteristics. This makes it ideal for a variety of different applications. Additionally, it is a highly efficient device that allows electrons to flow relatively free of resistance. This makes it an excellent choice for power systems that require efficient operation.

Overall, the TK31E60W,S1VX is a high-performance single N-Channel enhancement mode MOSFET transistor. It is suitable for a variety of applications that require fast switching, high current-handling, and excellent power efficiency. It is also capable of quickly switching between high and low voltage signals and is an ideal choice for power management, motor control, and industrial automation systems.

The specific data is subject to PDF, and the above content is for reference

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