TK31V60W5,LVQ Allicdata Electronics

TK31V60W5,LVQ Discrete Semiconductor Products

Allicdata Part #:

TK31V60W5LVQTR-ND

Manufacturer Part#:

TK31V60W5,LVQ

Price: $ 1.49
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N -CH 600V 30.8A DFN
More Detail: N-Channel 600V 30.8A (Ta) 240W (Tc) Surface Mount ...
DataSheet: TK31V60W5,LVQ datasheetTK31V60W5,LVQ Datasheet/PDF
Quantity: 1000
2500 +: $ 1.35384
Stock 1000Can Ship Immediately
$ 1.49
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Package / Case: 4-VSFN Exposed Pad
Supplier Device Package: 4-DFN-EP (8x8)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TA)
Power Dissipation (Max): 240W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Series: DTMOSIV
Rds On (Max) @ Id, Vgs: 109 mOhm @ 15.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

In the world of transistor technology, the TK31V60W5,LVQ is a type of FET (Field Effect Transistor). FETs are widely used in many circuits as a form of electronic switch, as they can be used to control the flow of current in an electrical circuit. The TK31V60W5,LVQ is a single MOSFET (Metal Oxide Semiconductor Field Effect Transistor), which has become increasingly popular due to its high levels of efficiency and low power consumption.

The TK31V60W5,LVQ is a “high side” MOSFET, which means that it is configured to handle high voltage and provide a high current carrying capacity. The device is based on the “depletion mode” principle, which involves using the electrical field effect of the gate in order to influence the source-drain current of the transistor. This type of transistor is often used to switch DC voltage and current in circuits, as well as amplify small signals.

The TK31V60W5,LVQ has a number of applications in fields including automotive, communications, consumer electronics and computing. For example, in automotive applications, the TK31V60W5,LVQ can be used in the powertrain for controlling air/fuel mixture, and in computing applications, the device can be used to switch voltages and currents in a variety of computing and data storage systems.

The TK31V60W5,LVQ works by controlling the current flow between the source and the drain terminals. This current is controlled by the application of a voltage to the Gate terminal. When a voltage is applied to the Gate terminal, it essentially creates a barrier between the Source and Drain. This barrier can then be adjusted by increasing or decreasing the voltage applied to the Gate, so as to change the amount of current passing through the device.

The TK31V60W5,LVQ is also capable of supplying a steady current to a device, regardless of the voltage applied to the Gate. This is useful in applications such as voltage regulators, where the current needs to remain consistent at different voltages. The FET can also be used to amplify signals, as its high current carrying capacity makes it ideal for applications such as wireless communications.

The TK31V60W5,LVQ is an invaluable device for many applications, and its wide range of features make it a popular choice for many different tasks. With its high current carrying capacity, low power consumption, and the ability to switch or amplify signals, the TK31V60W5,LVQ is a great way to make circuits more efficient and powerful.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "TK31" Included word is 11
Part Number Manufacturer Price Quantity Description
TK31E60X,S1X Toshiba Semi... 4.14 $ 1000 MOSFET N-CH 600V 30.8A TO...
TK31E60W,S1VX Toshiba Semi... 4.94 $ 1000 MOSFET N CH 600V 30.8A TO...
TK31V60W5,LVQ Toshiba Semi... 1.49 $ 1000 MOSFET N -CH 600V 30.8A D...
TK31V60X,LQ Toshiba Semi... 1.85 $ 5000 MOSFET N-CH 600V 30.8A 5D...
TK31A60W,S4VX Toshiba Semi... 4.94 $ 1000 MOSFET N-CH 600V 30.8A TO...
TK31J60W5,S1VQ Toshiba Semi... 5.79 $ 1000 MOSFET N-CH 600V 30.8A TO...
TK31V60W,LVQ Toshiba Semi... 3.8 $ 1000 MOSFET N CH 600V 30.8A 5D...
TK31N60W,S1VF Toshiba Semi... 6.73 $ 51 MOSFET N CH 600V 30.8A TO...
TK31N60W5,S1VF Toshiba Semi... 5.13 $ 1000 MOSFET N-CH 600V 30.8A TO...
TK31N60X,S1F Toshiba Semi... 4.35 $ 3 MOSFET N-CH 600V 30.8A TO...
TK31J60W,S1VQ Toshiba Semi... 6.73 $ 27 MOSFET N CH 600V 30.8A TO...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics