| Allicdata Part #: | TK40E06N1S1X-ND |
| Manufacturer Part#: |
TK40E06N1,S1X |
| Price: | $ 0.76 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET N CH 60V 40A TO-220 |
| More Detail: | N-Channel 60V 40A (Ta) 67W (Tc) Through Hole TO-22... |
| DataSheet: |  TK40E06N1,S1X Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.69300 |
| 50 +: | $ 0.55377 |
| 100 +: | $ 0.48460 |
| 500 +: | $ 0.37580 |
| 1000 +: | $ 0.29669 |
| Vgs(th) (Max) @ Id: | 4V @ 300µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220 |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 67W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 30V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
| Series: | U-MOSVIII-H |
| Rds On (Max) @ Id, Vgs: | 10.4 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 40A (Ta) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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TK40E06N1,S1X belongs to the category of transistors and metal-oxide-semiconductor field-effect transistors (MOSFETs). More specifically, this type of transistor is a single MOSFET transistor. In this article, we will be looking at the application field and working principle of this particular device.
Application Field
The TK40E06N1,S1X is a device designed for small-signal applications. It is widely used in logic interfaces, switching circuits, and pulse-forming circuits. It is a versatile device which can be found in almost any kind of electronic circuit. Due to its low on-state resistance and fast switching time, it is ideal for motor drive and amplifier applications. It can also be used in battery-powered applications where switching time and efficiency are of the essence.
Working Principle
The TK40E06N1,S1X works according to the basic principles of MOSFET transistors. At the heart of the device is a channel, which is composed of a dielectric gate oxide layer and silicon. When a gate voltage is applied, the channel is formed. This allows current to flow from the source to the drain. The voltage applied to the gate determines the resistance of the device. The higher the gate voltage, the higher the resistance, and the lower the current that can flow through the device.
The TK40E06N1,S1X also has some additional features which make it even more versatile. It has a built-in zener diode which can be used to protect the device from excess current and voltages. The device also has a “deadtime” feature which prevents both the source and drain from being ON simultaneously. This is useful when controlling an inverter circuit or when controlling multiple switches.
The TK40E06N1,S1X has a wide range of applications and is a great device for any small-signal application. It is easy to use and can provide a reliable solution for any circuit. With its low on-resistance, fast switching times and built-in protection features, the TK40E06N1,S1X is definitely a great choice for any device.
The specific data is subject to PDF, and the above content is for reference
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|---|
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