Allicdata Part #: | TK40P03M1(T6RDS-Q)-ND |
Manufacturer Part#: |
TK40P03M1(T6RDS-Q) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 30V 40A DPAK-3 |
More Detail: | N-Channel 30V 40A (Ta) Surface Mount DPAK |
DataSheet: | TK40P03M1(T6RDS-Q) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.3V @ 100µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -- |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1150pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17.5nC @ 10V |
Series: | U-MOSVI-H |
Rds On (Max) @ Id, Vgs: | 10.8 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The TK40P03M1 (T6RDS-Q) is a PMOS 3-terminal transistor. It features high power dissipation and low on-resistance, making it a suitable choice for applications such as battery-powered gadgets, consumer electronics, automotive and industrial equipment. The TK40P03M1 (T6RDS-Q) can be configured as a switch or amplifier due to its wide operating voltage range, has a maximum collector current of up to 6.0A, and can operate with voltages of up to 30 V.
The TK40P03M1 (T6RDS-Q) is a member of the T6 family of Power FETs, built on a highly reliable, low-resistance silicon substrate, and with a high quality, scratch-resistant immersion gold finish. It is also equipped with a unique power bonding technology that provides excellent heat dissipation, which is essential for safe operation of high-current components. The TK40P03M1 (T6RDS-Q) also incorporates thermal protection circuitry to protect against excessive current.
In terms of working principle, the TK40P03M1 (T6RDS-Q) employs a field effect transistor (FET) design. As a result, it typically exhibits low power consumption and a high switching speed, with an insulation resistance ranging from 30 to 70 megohm. The device has two separate terminals - the gate (G) and drain (D) - which are used to control the current flowing through the device. The gate can be used to turn the device ON or OFF, while the drain controls the amount of current allowed through the transistor.
The TK40P03M1 (T6RDS-Q) is widely used in automotive, consumer electronics and industrial equipment that require high power dissipation and low on-resistance. It is well suited for power applications, as well as for various other applications like battery-powered gadgets, low voltage DC motors, and inkjet printers. In addition, it is also ideal for use in audio amplification, automotive electronic controls, battery-powered gadgets and more.
The TK40P03M1 (T6RDS-Q) is an invaluable component used in many applications today. Thanks to its high power dissipation, low on-resistance, and wide operating voltage range, it provides a reliable and efficient solution for powering a variety of devices. Its unique power bonding technique further enhances the efficiency of the device and ensures that it operates safely at high currents.
The specific data is subject to PDF, and the above content is for reference
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