Allicdata Part #: | TK40P04M1(T6RSS-Q)-ND |
Manufacturer Part#: |
TK40P04M1(T6RSS-Q) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 40V 40A 3DP 2-7K1A |
More Detail: | N-Channel 40V 40A (Ta) 47W (Tc) Surface Mount DP |
DataSheet: | TK40P04M1(T6RSS-Q) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.3V @ 200µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DP |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 47W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1920pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Series: | U-MOSVI-H |
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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TK40P04M1(T6RSS-Q), also known as a N-channel enhancement mode field-effect transistor (FET), belongs to a type of semiconductor whose main function is to amplifying or switching electrical signals. This transistor works according to the principle of the field effect, whereby an electric charge applied to the gate terminal of the device can control the current flowing through the other two terminals.
The TK40P04M1(T6RSS-Q) is designed to benefit from the advantages of both FETs and MOSFETs, offering a low-impedance, efficient and reliable performance. The device has an integral channel layer which is insulated from the gate material, and the channel width is dependent on the magnitude of the gate voltage.
In terms of its application field, TK40P04M1(T6RSS-Q) transistors are commonly used in digital circuits and switching applications, where they provide good switching performance with low power consumption. Furthermore, these devices are often used in high-performance analog applications, where they provide high-impedance input as well as low-noise output.
TK40P04M1(T6RSS-Q) transistors are robust and versatile, making them ideal for a wide range of applications. In amplifying circuits, these devices can provide significant power gain for both single-ended and push-pull passive circuits, as well as larger output power levels for load driving and switching applications. In addition, these devices are often used in pulse-width modulation applications, where they act as switches to alternately turn the load on and off.
In terms of its working principle, the TK40P04M1(T6RSS-Q) transistor is based on the electrostatic field-effect principle, where the current flow is controlled by the electric field at the gate terminal. As the gate voltage increases, the channel between the source and drain terminals becomes increasingly narrow, thus reducing the current flow between them. Conversely, when the gate voltage decreases, the channel becomes wider, allowing more current to flow.
The TK40P04M1(T6RSS-Q) transistor is well-suited to power applications due to its low-impedance and voltage-controlled output. It can also be used in switching applications due to its fast switching speed and low-power requirements. Moreover, these devices are extremely reliable and efficient, offering exceptional performance in both analog and digital circuits.
The specific data is subject to PDF, and the above content is for reference
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