TN2404K-T1-E3 Discrete Semiconductor Products

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The TN2404K-T1-E3 is a Silicon N-channel enhancement mode Field Effect Transistor (FET). This type of transistor is commonly referred to as a MOSFET, or “Metal Oxide Semiconductor Field Effect Transistor”. It is a three lead component that is commonly used in many electronic projects and applications, either as a switch, amplifier, or as a voltage-controlled device.

The TN2404K-T1-E3 has a maximum drain current rating of 90 Amps. Its gate oxide thickness is 4.5 nm, with a native oxide that is 1.3 nm. The maximum drain-source voltage is 30 Volts, with a maximum drain-gate voltage of 20 Volts. These ratings make the TN2404K-T1-E3 suitable for applications where high current levels and high frequencies are required.

In terms of its application field, the TN2404K-T1-E3 can be used for a variety of applications requiring high current and power dissipation. It can be used as a switch for high-level, low-voltage, pulse, and field-effect applications. It can also be used as a low-dropout (LDO) regulator in dc-to-dc converters and power supplies. Other applications include, but are not limited to, motor speed control, electric vehicle charging, and switching regulation of automotive systems.

The TN2404K-T1-E3 also has excellent characteristics when used in analog and digital switching designs. It exhibits low drain-gate capacitance and gate resistances, making it well-suited for applications requiring high switching speed and fast turn-on/turn-off times. It is also highly resistant to electrostatic discharge, making it ideal for use in sensitive equipment.

The working principle of the TN2404K-T1-E3 is based on the semiconductor device physics. In this type of transistor, the gate voltage changes the conductivity of the channel by controlling the voltage carriers in it. This is known as threshold voltage control, which means the current in the channel is modified by the gate voltage, thus changing its resistance. As the die is placed between the drain and the source, the varying voltage carriers are capable of modulating the current flow through the channel, thus enabling its use as a switch, amplifier, or voltage regulator.

In its simplest form, the TN2404K-T1-E3 can be used as a high-power switch. When a signal is applied to the gate of the transistor, the resistance of the channel is lowered, allowing current to flow. When the signal is removed, the resistance of the channel is increased, blocking the current and turning off the switch. This capability makes the TN2404K-T1-E3 ideal for use in electronic devices that require high power on/off control.

The TN2404K-T1-E3 is definitely an excellent choice for many applications, from high power switching to high frequency switching and high-efficiency voltage regulation. It offers excellent characteristics for reliable, efficient operation in many types of projects and applications. Whether used for switching, analog or digital designs, the TN2404K-T1-E3 will provide reliable, efficient performance.

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