TN2435N8-G

Vgs(th) (Max) @ Id:	2.5V @ 1mA
Package / Case:	TO-243AA
Supplier Device Package:	TO-243AA (SOT-89)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.6W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	200pF @ 25V
Vgs (Max):	±20V
Series:	--
Rds On (Max) @ Id, Vgs:	6 Ohm @ 750mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	3V, 10V
Current - Continuous Drain (Id) @ 25°C:	365mA (Tj)
Drain to Source Voltage (Vdss):	350V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The TN2435N8-G is a single-channel type P-channel enhancement mode transistor (MOSFET). It is commonly used in the power management of electronic devices, such as microprocessors, intelligent controllers and small electronic appliances.The TN2435N8-G is designed for low conduction loss. Its operating temperature range is from -55°C to +175°C. This device features an extremely low input capacitance, a very low gate resistance, and a very low on-resistance. The wide range of operating temperatures makes this device an ideal choice for use in temperature critical applications.The working principle of the TN2435N8-G is based on the principle of instability in the electric current due to the presence of charge carriers. The transistor functions as a switch, controlling the flow of electrons between the source and the drain. When the gate-source voltage is above the threshold voltage, the gate-source voltage drives the current flow through the transistor. The effect of a voltage change on the gate voltage is amplified, which changes the charge carriers’ density and consequently changes the electric current through the transistor.The TN2435N8-G can be found in many consumer electronics such as air conditioners, cooling fans, power supplies, medical and industrial equipment, automotive applications, and audio components. It is often used as an inverter, a motor driver, a voltage regulator or as an analog switch.The TN2435N8-G is typically used in applications where low power consumption is paramount. With its low input capacitance and low gate resistance, the TN2435N8-G is capable of achieving high frequency switching, while maintaining low power consumption. Its low operating temperature range makes it an ideal choice for applications, where thermal management is a critical factor.In addition to its low power consumption, the TN2435N8-G offers superior performance in the form of low leakage current and minimal switching loss. The low on-resistance allows for faster switching, which leads to better power efficiency. Its compatibility with standard MOSFET drivers also provides an easy way to incorporate the device into existing systems.The TN2435N8-G is a reliable and dependable device for high performance and power efficiency. Its wide temperature range and low power characteristics make it an excellent choice for a wide range of applications. With its rugged design, superior performance and low power capabilities, the TN2435N8-G is the perfect choice for applications where reliable operation is a must.

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