TN2404K-T1-GE3 Discrete Semiconductor Products

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TN2404K-T1-GE3 is a type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET). This field effect transistor has a single die construction with three insulated gate terminals: a gate, a source and a drain. It is designed to be used in low frequency applications and to exhibit high performance in the areas of switching and amplification. The device is offered in various configurations with different dielectric materials, multiple gate oxide options and various types of packages.

The TN2404K-T1-GE3 is an N-Channel enhancement mode MOSFET with a 17V drain supply and a 3A max drain current rating. It has an enhanced gate oxide charge construction and a maximum RDS(on) of 0.45Ω at VGS = 10V. The device has a low input capacitance of 8.2 pF, a high output impedance of 12.4Ω and a maximum junction temperature of 125°C. The TN2404K-T1-GE3 offers excellent switching performance and high breakdown voltage. The device has been designed to operate in harsh environments and can withstand ambient temperatures up to 175°C.

The TN2404K-T1-GE3 is used in a variety of applications, such as industrial automation, power supplies, and motor controls. Its common uses include buck and boost converters, AC/DC motor drives, microwave oven power supplies, and power management. The compact size of the device allows it to be used in applications that require a small footprint, such as desktop computers, 4K and 8K high-definition TV sets, and networking equipment, as well as in most types of consumer electronics.

TN2404K-T1-GE3 is a versatile component due to its various functional and electrical characteristics, making it compatible with a broad range of applications and systems. As an enhancement mode MOSFET, the device is able to maintain low input capacitance and high output impedance, allowing it to be used in applications that require high speed, low power dissipation, and low noise.

The working principle of TN2404K-T1-GE3 is similar to that of other MOSFETs. When an external voltage is applied across the gate and source terminals, an electric field is generated and the gate–channel junction becomes forward-biased. This forward biasing of the junction provides an electric field in the region between the gate and the channel. This electric field attracts mobile charge carriers from the channel and these carriers gain sufficient energy to cross the barrier between the channel and the channel between the source. As the number of charge carriers increase, a low-resistance path is created between the source and the drain, which allows current to flow through the device.

TN2404K-T1-GE3 is a versatile component with a wide set of applications. Its small size, low power consumption and high performance make it an excellent choice for use in a variety of low-frequency transistor applications requiring high switching speed, low-level signal amplification, and/or high output impedance. The device also offers robust operation in harsh environments and is offered in various configurations for more specialized needs.

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