Allicdata Part #: | TN5325N3-G-P002-ND |
Manufacturer Part#: |
TN5325N3-G-P002 |
Price: | $ 0.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET N-CH 250V 0.215A TO92-3 |
More Detail: | N-Channel 250V 215mA (Ta) 740mW (Ta) Through Hole ... |
DataSheet: | TN5325N3-G-P002 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.31147 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -- |
Power Dissipation (Max): | 740mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 110pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7 Ohm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 215mA (Ta) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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TN5325N3-G-P002 Application Field and Working Principle
TN5325N3-G-P002 is an electronic component based on a semiconductor field effect transistor (FET) and a metal oxide semiconductor field effect transistor (MOSFET). It is a single transistor with an integrated drive circuit. TN5325N3-G-P002 has a simple structure, high switching speed and low loss of on-state. It is widely used in power conversion and control, high-frequency communications, signal transmission and other fields.
Overview of TN5325N3-G-P002
TN5325N3-G-P002 has a general structure. Its input signal is connected to the gate. When the signal is applied, the input signal generates electric field with potential difference, which generates capacitance at the gate and the channel, and starts to conduct. The drain-source voltage and the drain current increase, and the output voltage of the load is regulated by adjusting the gate voltage. There are four pins, namely drain, source, gate and body. The drain collects the current output from the load, and the source outputs the current after being amplified. The gate is used for voltage control and the body is the ground circuit.
Advantages of TN5325N3-G-P002
TN5325N3-G-P002 has many advantages, such as simple structure, low on-state loss, high switching speed and easy drive. In addition, it has wide operating temperature range and strong anti-interference ability. It is also highly reliable and has a long service life. In terms of the application field, because of its advantages, TN5325N3-G-P002 is widely used in power conversion and control, high-frequency communications, signal transmission and other fields.
Working Principle of TN5325N3-G-P002
The working principle of TN5325N3-G-P002 is very simple. When the input signal is ON, the gate voltage increases, while the body voltage decreases, causing the drain and source pins to form a conducting channel. The drain-source voltage increases, and the output current also increases, then the output voltage of the load is regulated.
Conclusion
TN5325N3-G-P002 is a single FET transistor based component. It has a simple structure and high switching speed, making it an ideal component for power conversion and control, high-frequency communications, signal transmission and other fields. It can be very reliable and highly cost effective in common applications.
The specific data is subject to PDF, and the above content is for reference
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