TN5335K1-G Discrete Semiconductor Products |
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Allicdata Part #: | TN5335K1-GTR-ND |
Manufacturer Part#: |
TN5335K1-G |
Price: | $ 0.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET N-CH 350V 0.11A SOT23-3 |
More Detail: | N-Channel 350V 110mA (Tj) 360mW (Ta) Surface Mount... |
DataSheet: | TN5335K1-G Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.36338 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 (TO-236AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 360mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 110pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 15 Ohm @ 200mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 3V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 110mA (Tj) |
Drain to Source Voltage (Vdss): | 350V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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TN5335K1-G is a silicon n-channel junction field-effect transistor (JFET) designed specifically for use in low-level analog switching and general purpose amplifier applications.
This transistor is designed to provide a very low RDS(on) at low gate source voltages. It has a high current capacity and requires low power consumption compared to other types of transistors.
The TN5335K1-G JFET is an ideal device for low level analog switching applications. It can be used in any circuit where a high resistance is desired, such as for low-voltage switching in power supply systems.
The TN5335K1-G JFET is also used in high-frequency amplifier applications, where a low RDS(on) and low voltage operation are required. It is also used in low-noise preamplifiers and audio switching circuits.
The TN5335K1-G is a JFET device and its operation is based on the principles of field-effect transistors. The structure of this device is a p-channel depletion-mode FET, which has three terminals: the gate, the drain, and the source.
The gate terminal of the TN5335K1-G is sensitive to the voltage that is applied to it. When the gate voltage is higher than the threshold voltage, the device is in the linear operating region, and when the gate voltage is lower than the threshold voltage, the device is in the cutoff region.The drain and the source terminals of this device are connected in series so that when the gate voltage is applied, it creates an electric field between the drain and the source. This creates electron flow between the drain and the source, which is responsible for the current flowing through the device.
The TN5335K1-G is designed to be used in low-level analog switching and amplifier applications. Its low RDS(on) allows it to be used in high-frequency applications, while its low power consumption and high current capacity makes it suitable for general-purpose amplifier applications. It is also used in low-noise preamplifiers and audio switching circuits due to its high frequency operation and low RDS(on).
The TN5335K1-G is a versatile device, which can be used in a wide variety of applications. It is a great choice for low-level analog switching and amplifier applications, as well as high-frequency amplifier applications where a low RDS(on) and low voltage operation are required.
The specific data is subject to PDF, and the above content is for reference
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