TN5325N3-G

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The TN5325N3-G is a high voltage N-channel MOSFET that is used in a wide range of applications, including motor control, DC-DC power supplies and lighting applications. It features a high thermal performance with a low gate charge, making it an ideal device for power switching applications. The device has an on-resistance that varies according to the drain-source voltage, allowing it to be used in a variety of voltage and current configurations. In addition, the device is RoHS compliant and has a maximum avalanche energy rating of 30 mJ.

The TN5325N3-G is built on a high-grade silicon oxide field-effect transistor (FET) structure. The FET is a voltage-controlled device that is composed of two terminals, the source and the drain, and a gate. The gate is electrically insulated from the channel by an oxide layer and is used to control the current flow between the source and drain. When a voltage is applied to the gate, it changes the shape of the channel, allowing for current to flow between the source and drain. This device can be used in both enhancement and depletion modes, making it a versatile choice for many high voltage applications.

The device also features a low gate input capacitance of just 2 pF, making it suitable for high speed switching applications. It has a high breakdown voltage rating of 100 V and a maximum drain-source voltage of 60 V. The device\'s maximum continuous drain current is 3 A and has a typical forward transconductance of 1.2 S. It can be easily paralleled with other devices to achieve higher currents.

The TN5325N3-G is an ideal choice for power supply applications requiring precise control over current and voltage. The low gate charge makes it suitable for wide ranges of PWM applications, allowing for rapid and efficient power switching. The device also has excellent thermal properties, allowing it to be used in applications with high thermal loads. It is a great choice for motor control and lighting applications, as well as DC-DC power supply designs.

The TN5325N3-G is a versatile high voltage MOSFET that can be used in a variety of high voltage applications. It features a low gate charge, a high breakdown voltage rating and excellent thermal properties, making it an ideal choice for power supply, motor control and lighting applications. The device\'s low gate input capacitance also allows it to be used in high speed switching applications. With its high performance characteristics, the device is a great choice for applications that require precise voltage and current control.

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